KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Online Publication Date2011-01-21
Print Publication Date2010-12
Permanent link to this recordhttp://hdl.handle.net/10754/247351
MetadataShow full item record
AbstractSince the fourth fundamental element (Memristor) became a reality by HP labs, and due to its huge potential, its mathematical models became a necessity. In this paper, we provide a simple mathematical model of Memristors characterized by linear dopant drift for sinusoidal input voltage, showing a high matching with the nonlinear SPICE simulations. The frequency response of the Memristor's resistance and its bounding conditions are derived. The fundamentals of the pinched i-v hysteresis, such as the critical resistances, the hysteresis power and the maximum operating current, are derived for the first time.
CitationRadwan AG, Zidan MA, Salama KN (2010) On the mathematical modeling of memristors. 2010 International Conference on Microelectronics. doi:10.1109/ICM.2010.5696139.
Conference/Event name2010 International Conference on Microelectronics, ICM'10