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dc.contributor.authorEmira, Ahmed
dc.contributor.authorAbdelGhany, M.
dc.contributor.authorElsayed, M.
dc.contributor.authorElshurafa, Amro M.
dc.contributor.authorSedky, S.
dc.contributor.authorSalama, Khaled N.
dc.date.accessioned2012-10-06T00:43:23Z
dc.date.available2012-10-06T00:43:23Z
dc.date.issued2012-10-06
dc.identifier.citationEmira A, AbdelGhany M, Elsayed M, Elshurafa AM, Sedky S, et al. (2013) All-pMOS 50-V Charge Pumps Using Low-Voltage Capacitors. IEEE Trans Ind Electron 60: 4683-4693. doi:10.1109/TIE.2012.2213674.
dc.identifier.issn0278-0046
dc.identifier.issn1557-9948
dc.identifier.doi10.1109/TIE.2012.2213674
dc.identifier.urihttp://hdl.handle.net/10754/247291
dc.description.abstractIn this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6272344
dc.rightsArchived with thanks to IEEE Transactions on Industrial Electronics
dc.subjectcharge pump
dc.subjectDC-DC
dc.subjectmems
dc.title50V All-PMOS Charge Pumps Using Low-Voltage Capacitors
dc.typeArticle
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
dc.contributor.departmentSensors Lab
dc.identifier.journalIEEE Transactions on Industrial Electronics
dc.eprint.versionPost-print
dc.contributor.institutionDepartment of Electronics and Communications Engineering, Faculty of Engineering, Cairo University, Giza 12613, Egypt
dc.contributor.institutionMcGill University, Montreal, QC H3A 0G4, Canada
dc.contributor.institutionZewail University, Cairo 11461, Egypt
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)
kaust.personElshurafa, Amro M.
kaust.personSalama, Khaled N.
refterms.dateFOA2018-06-13T13:54:40Z


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