Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Physical Science and Engineering (PSE) Division
Sensors Lab
Date
2012-08-17Online Publication Date
2012-08-17Print Publication Date
2013-10Permanent link to this record
http://hdl.handle.net/10754/247291
Metadata
Show full item recordAbstract
In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.Citation
Emira A, AbdelGhany M, Elsayed M, Elshurafa AM, Sedky S, et al. (2013) All-pMOS 50-V Charge Pumps Using Low-Voltage Capacitors. IEEE Trans Ind Electron 60: 4683-4693. doi:10.1109/TIE.2012.2213674.ae974a485f413a2113503eed53cd6c53
10.1109/TIE.2012.2213674