Enhanced terahertz detection using multiple GaAs HEMTs connected in series
KAUST DepartmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Electrical Engineering Program
Office of the VP
Physical Science and Engineering (PSE) Division
Online Publication Date2009-07-22
Print Publication Date2009-06
Permanent link to this recordhttp://hdl.handle.net/10754/236093
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AbstractWe report here, for the first time, on enhanced nonresonant detection of terahertz radiation using multiple InGaAs/GaAs high-electron-mobility transistors (HEMTs) connected in series and biased by a direct drain current. A 1.63 THz (184 mum) response is proportional to the number of detecting transistors operating in saturation region at the same gate-source bias voltage. The experimental data are in agreement with the detection mechanism based on the rectification of overdamped plasma waves excited by radiation in channels of devices.
CitationElkhatib TA, Veksler DB, Salama KN, Zhang X-C, Shur MS (2009) Enhanced terahertz detection using multiple GaAs HEMTs connected in series. 2009 IEEE MTT-S International Microwave Symposium Digest. doi:10.1109/MWSYM.2009.5165852.
Conference/Event name2009 IEEE MTT-S International Microwave Symposium, IMS 2009