Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior
KAUST DepartmentBiological and Environmental Sciences and Engineering (BESE) Division
Electrical Engineering Program
Physical Science and Engineering (PSE) Division
Sensing, Magnetism and Microsystems Lab
Online Publication Date2012-05-07
Print Publication Date2012-09
Permanent link to this recordhttp://hdl.handle.net/10754/235691
MetadataShow full item record
AbstractIn this paper we study the asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) for single and double barrier magnetic tunnel junctions (MTJs) in range of a quasi-classical free electron model. Numerical calculations of the TMR-V curves, output voltages and I-V characteristics for negative and positive values of applied voltages were carried out using MTJs with CoFeB/MgO interfaces as an example. Asymmetry of the experimental TMR-V curves is explained by different values of the minority and majority Fermi wave vectors for the left and right sides of the tunnel barrier, which arises due to different annealing regimes. Electron tunneling in DMTJs was simulated in two ways: (i) Coherent tunneling, where the DMTJ is modeled as one tunnel system and (ii) consecutive tunneling, where the DMTJ is modeled by two single barrier junctions connected in series. © 2012 Elsevier B.V. All rights reserved.
CitationUseinov A, Mryasov O, Kosel J (2012) Output voltage calculations in double barrier magnetic tunnel junctions with asymmetric voltage behavior. Journal of Magnetism and Magnetic Materials 324: 2844-2848. doi:10.1016/j.jmmm.2012.04.025.