Type
ArticleKAUST Department
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) DivisionElectrical Engineering Program
Physical Science and Engineering (PSE) Division
Sensors Lab
Date
2011-12-05Online Publication Date
2011-12-05Print Publication Date
2012-02Permanent link to this record
http://hdl.handle.net/10754/235131
Metadata
Show full item recordAbstract
This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.Citation
Elshurafa AM, Radwan AG, Emira A, Salama KN (2012) RF MEMS Fractal Capacitors With High Self-Resonant Frequencies. Journal of Microelectromechanical Systems 21: 10-12. doi:10.1109/JMEMS.2011.2175367.ae974a485f413a2113503eed53cd6c53
10.1109/JMEMS.2011.2175367