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    RF MEMS Fractal Capacitors With High Self-Resonant Frequencies

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    Type
    Article
    Authors
    Elshurafa, Amro M.
    Emira, Ahmed
    Radwan, Ahmed Gomaa
    Salama, Khaled N. cc
    KAUST Department
    Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
    Electrical Engineering Program
    Physical Science and Engineering (PSE) Division
    Sensors Lab
    Date
    2011-12-05
    Online Publication Date
    2011-12-05
    Print Publication Date
    2012-02
    Permanent link to this record
    http://hdl.handle.net/10754/235131
    
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    Abstract
    This letter demonstrates RF microelectromechanical systems (MEMS) fractal capacitors possessing the highest reported self-resonant frequencies (SRFs) in PolyMUMPS to date. Explicitly, measurement results show SRFs beyond 20 GHz. Furthermore, quality factors higher than 4 throughout a band of 1-15 GHz and reaching as high as 28 were achieved. Additional benefits that are readily attainable from implementing fractal capacitors in MEMS are discussed, including suppressing residual stress warping, eliminating the need for etching holes, and reducing parasitics. The latter benefits were acquired without any fabrication intervention. © 2011 IEEE.
    Citation
    Elshurafa AM, Radwan AG, Emira A, Salama KN (2012) RF MEMS Fractal Capacitors With High Self-Resonant Frequencies. Journal of Microelectromechanical Systems 21: 10-12. doi:10.1109/JMEMS.2011.2175367.
    Publisher
    Institute of Electrical and Electronics Engineers (IEEE)
    Journal
    Journal of Microelectromechanical Systems
    DOI
    10.1109/JMEMS.2011.2175367
    Additional Links
    http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6095305
    ae974a485f413a2113503eed53cd6c53
    10.1109/JMEMS.2011.2175367
    Scopus Count
    Collections
    Articles; Physical Science and Engineering (PSE) Division; Electrical Engineering Program; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

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