Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

Handle URI:
http://hdl.handle.net/10754/627635
Title:
Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators
Authors:
Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Gnade, Bruce E.
Abstract:
The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
Citation:
Zhang B, Zheng T, Wang Q, Guo Z, Kim MJ, et al. (2018) Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators. Scripta Materialia 152: 36–39. Available: http://dx.doi.org/10.1016/j.scriptamat.2018.03.040.
Publisher:
Elsevier BV
Journal:
Scripta Materialia
Issue Date:
14-Apr-2018
DOI:
10.1016/j.scriptamat.2018.03.040
Type:
Article
ISSN:
1359-6462
Sponsors:
The research was partially financially supported by the University of Texas at Dallas. The authors acknowledge Dr. Gordon Pollock, Mr. Wallace Martin and Mr. Zane Borg for help with thin-film preparation.
Additional Links:
http://www.sciencedirect.com/science/article/pii/S1359646218302021
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Boen
dc.contributor.authorZheng, Taoen
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorKim, Moon J.en
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorGnade, Bruce E.en
dc.date.accessioned2018-04-24T07:48:29Z-
dc.date.available2018-04-24T07:48:29Z-
dc.date.issued2018-04-14en
dc.identifier.citationZhang B, Zheng T, Wang Q, Guo Z, Kim MJ, et al. (2018) Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators. Scripta Materialia 152: 36–39. Available: http://dx.doi.org/10.1016/j.scriptamat.2018.03.040.en
dc.identifier.issn1359-6462en
dc.identifier.doi10.1016/j.scriptamat.2018.03.040en
dc.identifier.urihttp://hdl.handle.net/10754/627635-
dc.description.abstractThe thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.en
dc.description.sponsorshipThe research was partially financially supported by the University of Texas at Dallas. The authors acknowledge Dr. Gordon Pollock, Mr. Wallace Martin and Mr. Zane Borg for help with thin-film preparation.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S1359646218302021en
dc.subjectThermoelectric materialsen
dc.subjectSputteringen
dc.subjectAnnealingen
dc.subjectRefractory metalsen
dc.subjectElectrical contactsen
dc.titleStable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generatorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labs, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabiaen
dc.identifier.journalScripta Materialiaen
dc.contributor.institutionMaterials Science and Engineering Department, University of Texas at Dallas, Richardson, TX 75080, USAen
dc.contributor.institutionLyle School of Engineering, Southern Methodist University, Dallas, TX 75275, USAen
kaust.authorGuo, Zaibingen
kaust.authorAlshareef, Husam N.en
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