Rashba effect and enriched spin-valley coupling in GaX / MX2 ( M = Mo, W; X = S, Se, Te) heterostructures

Handle URI:
http://hdl.handle.net/10754/627608
Title:
Rashba effect and enriched spin-valley coupling in GaX / MX2 ( M = Mo, W; X = S, Se, Te) heterostructures
Authors:
Zhang, Qingyun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Using first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program
Citation:
Zhang Q, Schwingenschlögl U (2018) Rashba effect and enriched spin-valley coupling in GaX / MX2 ( M = Mo, W; X = S, Se, Te) heterostructures. Physical Review B 97. Available: http://dx.doi.org/10.1103/PhysRevB.97.155415.
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
16-Apr-2018
DOI:
10.1103/PhysRevB.97.155415
Type:
Article
ISSN:
2469-9950; 2469-9969
Sponsors:
The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
Additional Links:
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.155415
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Qingyunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2018-04-24T06:46:18Z-
dc.date.available2018-04-24T06:46:18Z-
dc.date.issued2018-04-16en
dc.identifier.citationZhang Q, Schwingenschlögl U (2018) Rashba effect and enriched spin-valley coupling in GaX / MX2 ( M = Mo, W; X = S, Se, Te) heterostructures. Physical Review B 97. Available: http://dx.doi.org/10.1103/PhysRevB.97.155415.en
dc.identifier.issn2469-9950en
dc.identifier.issn2469-9969en
dc.identifier.doi10.1103/PhysRevB.97.155415en
dc.identifier.urihttp://hdl.handle.net/10754/627608-
dc.description.abstractUsing first-principles calculations, we investigate the electronic properties of the two-dimensional GaX/MX2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between GaX and MX2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K′ valleys (out-of-plane spin direction) makes GaX/MX2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.en
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.97.155415en
dc.rightsArchived with thanks to Phys. Rev. Ben
dc.titleRashba effect and enriched spin-valley coupling in GaX / MX2 ( M = Mo, W; X = S, Se, Te) heterostructuresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
kaust.authorZhang, Qingyunen
kaust.authorSchwingenschlögl, Udoen
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