Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

Handle URI:
http://hdl.handle.net/10754/627600
Title:
Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications
Authors:
Mohammed, Hanan; Corte-León, Hector; Ivanov, Yurii P. ( 0000-0003-0271-5504 ) ; Lopatin, Sergei; Moreno, Julian A.; Chuvilin, Andrey; Salimath, Akshaykumar; Manchon, Aurelien ( 0000-0002-4768-293X ) ; Kazakova, Olga; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Imaging and Characterization Core Lab
Publisher:
arXiv
Issue Date:
18-Apr-2018
ARXIV:
arXiv:1804.06616
Type:
Preprint
Additional Links:
http://arxiv.org/abs/1804.06616v1; http://arxiv.org/pdf/1804.06616v1
Appears in Collections:
Other/General Submission; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMohammed, Hananen
dc.contributor.authorCorte-León, Hectoren
dc.contributor.authorIvanov, Yurii P.en
dc.contributor.authorLopatin, Sergeien
dc.contributor.authorMoreno, Julian A.en
dc.contributor.authorChuvilin, Andreyen
dc.contributor.authorSalimath, Akshaykumaren
dc.contributor.authorManchon, Aurelienen
dc.contributor.authorKazakova, Olgaen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2018-04-24T06:46:17Z-
dc.date.available2018-04-24T06:46:17Z-
dc.date.issued2018-04-18en
dc.identifier.urihttp://hdl.handle.net/10754/627600-
dc.description.abstractA next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.en
dc.publisherarXiven
dc.relation.urlhttp://arxiv.org/abs/1804.06616v1en
dc.relation.urlhttp://arxiv.org/pdf/1804.06616v1en
dc.rightsArchived with thanks to arXiven
dc.titleCurrent Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applicationsen
dc.typePreprinten
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentImaging and Characterization Core Laben
dc.eprint.versionPre-printen
dc.contributor.institutionNational Physical Laboratory, Teddington, Hampton Road, TW11 0LW, United Kingdomen
dc.contributor.institutionSchool of Natural Sciences, Far Eastern Federal University, 690950, Vladivostok, Russiaen
dc.contributor.institutionErich Schmid Institute of Materials Science, Austrian Academy of Sciences, Jahnstrasse 12, A-8700, Leoben, Austriaen
dc.contributor.institutionIKERBASQUE, Basque Foundation for Science, Maria Diaz de Haro 3, 48013 Bilbao, Spainen
dc.contributor.institutionCIC nanoGUNE Consolider, Avenida de Tolosa 76, 20018 San Sebastian, Spainen
dc.identifier.arxividarXiv:1804.06616en
kaust.authorMohammed, Hananen
kaust.authorIvanov, Yurii P.en
kaust.authorLopatin, Sergeien
kaust.authorMoreno, Julian A.en
kaust.authorSalimath, Akshaykumaren
kaust.authorManchon, Aurelienen
kaust.authorKosel, Jürgenen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.