Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

Handle URI:
http://hdl.handle.net/10754/627559
Title:
Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors
Authors:
Han, Yang; Fei, Zhuping ( 0000-0002-2160-9136 ) ; Lin, Yen-Hung; Martin, Jaime; Tuna, Floriana; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 ) ; Heeney, Martin
Abstract:
Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; KAUST Solar Center (KSC)
Citation:
Han Y, Fei Z, Lin Y-H, Martin J, Tuna F, et al. (2018) Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors. npj Flexible Electronics 2. Available: http://dx.doi.org/10.1038/s41528-018-0024-2.
Publisher:
Springer Nature
Journal:
npj Flexible Electronics
Issue Date:
13-Mar-2018
DOI:
10.1038/s41528-018-0024-2
Type:
Article
ISSN:
2397-4621
Sponsors:
We thank the National EPR Facility and Service Centre in The University of Manchester for experimental and data analysis support on EPR spectroscopy. This work was financially supported by the British Council (grant number 173601536).
Additional Links:
https://www.nature.com/articles/s41528-018-0024-2
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; KAUST Solar Center (KSC)

Full metadata record

DC FieldValue Language
dc.contributor.authorHan, Yangen
dc.contributor.authorFei, Zhupingen
dc.contributor.authorLin, Yen-Hungen
dc.contributor.authorMartin, Jaimeen
dc.contributor.authorTuna, Florianaen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.contributor.authorHeeney, Martinen
dc.date.accessioned2018-04-19T10:45:30Z-
dc.date.available2018-04-19T10:45:30Z-
dc.date.issued2018-03-13en
dc.identifier.citationHan Y, Fei Z, Lin Y-H, Martin J, Tuna F, et al. (2018) Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors. npj Flexible Electronics 2. Available: http://dx.doi.org/10.1038/s41528-018-0024-2.en
dc.identifier.issn2397-4621en
dc.identifier.doi10.1038/s41528-018-0024-2en
dc.identifier.urihttp://hdl.handle.net/10754/627559-
dc.description.abstractMolecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.en
dc.description.sponsorshipWe thank the National EPR Facility and Service Centre in The University of Manchester for experimental and data analysis support on EPR spectroscopy. This work was financially supported by the British Council (grant number 173601536).en
dc.publisherSpringer Natureen
dc.relation.urlhttps://www.nature.com/articles/s41528-018-0024-2en
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleAnion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.identifier.journalnpj Flexible Electronicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDept. Physics and Centre for Plastic Electronics, Imperial College London, Exhibition Rd, London, SW7 2AZ, UKen
dc.contributor.institutionDept. Chemistry and Centre for Plastic Electronics, Imperial College London, Exhibition Rd, London, SW7 2AZ, UKen
dc.contributor.institutionDept. of Materials, Imperial College London, Exhibition Rd, London, SW7 2AZ, UKen
dc.contributor.institutionSchool of Chemistry and Photon Science Institute, University of Manchester, Oxford Rd, Manchester, M13 9PL, UKen
kaust.authorAnthopoulos, Thomas D.en
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