Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation

Handle URI:
http://hdl.handle.net/10754/627532
Title:
Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation
Authors:
Yandjah, L.; Bechiri, L.; Benabdeslem, M.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Ziani, Ahmed ( 0000-0001-7059-0999 )
Abstract:
Polycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.
KAUST Department:
KAUST Catalysis Center (KCC); Physical Sciences and Engineering (PSE) Division
Citation:
Yandjah L, Bechiri L, Benabdeslem M, Benslim N, Amara A, et al. (2018) Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation. Chinese Journal of Physics. Available: http://dx.doi.org/10.1016/j.cjph.2018.03.028.
Publisher:
Elsevier BV
Journal:
Chinese Journal of Physics
Issue Date:
3-Apr-2018
DOI:
10.1016/j.cjph.2018.03.028
Type:
Article
ISSN:
0577-9073
Additional Links:
http://www.sciencedirect.com/science/article/pii/S0577907318300480
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; KAUST Catalysis Center (KCC)

Full metadata record

DC FieldValue Language
dc.contributor.authorYandjah, L.en
dc.contributor.authorBechiri, L.en
dc.contributor.authorBenabdeslem, M.en
dc.contributor.authorBenslim, N.en
dc.contributor.authorAmara, A.en
dc.contributor.authorPortier, X.en
dc.contributor.authorBououdina, M.en
dc.contributor.authorZiani, Ahmeden
dc.date.accessioned2018-04-16T11:27:44Z-
dc.date.available2018-04-16T11:27:44Z-
dc.date.issued2018-04-03en
dc.identifier.citationYandjah L, Bechiri L, Benabdeslem M, Benslim N, Amara A, et al. (2018) Photoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporation. Chinese Journal of Physics. Available: http://dx.doi.org/10.1016/j.cjph.2018.03.028.en
dc.identifier.issn0577-9073en
dc.identifier.doi10.1016/j.cjph.2018.03.028en
dc.identifier.urihttp://hdl.handle.net/10754/627532-
dc.description.abstractPolycrystalline CuIn0.5Ga0.5Te2 films were deposited by flash evaporation from ingot prepared by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te elements in vacuum sealed quartz . The as-obtained films were characterized by X – ray diffraction (XRD), transmission electron microscopy (TEM) combined with energy dispersive spectroscopy (EDS). XRD and TEM results showed that the layer has a chalcopyrite-type structure, predominantly oriented along (112) planes, with lattice parameters a = 0.61 nm and c = 1.22 nm. The optical properties in the near - infrared and visible range 600 - 2400 nm have been studied. The analysis of absorption coefficient yielded an energy gap value of 1.27 eV. Photoluminescence analysis of as-grown sample shows two main emission peaks located at 0.87 and 1.19 eV at 4 K.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0577907318300480en
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Chinese Journal of Physics. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Chinese Journal of Physics, [, , (2018-04-03)] DOI: 10.1016/j.cjph.2018.03.028 . © 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectChalcogenidesen
dc.subjectOptical materialsen
dc.subjectSemiconductorsen
dc.subjectThin filmsen
dc.subjecttransmission electron microscopyen
dc.titlePhotoluminescence of polycrystalline CuIn 0.5 Ga 0.5 Te 2 thin films grown by flash evaporationen
dc.typeArticleen
dc.contributor.departmentKAUST Catalysis Center (KCC)en
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalChinese Journal of Physicsen
dc.eprint.versionPost-printen
dc.contributor.institutionLPMR, Department of Material Sciences, Faculty of Science and Technology, Univ-Souk-Ahras 41000. Algeriaen
dc.contributor.institution(LESIMS)-(LEREC), Département de Physique, Faculté des Sciences, Univ-Badji Mokhtar, Annaba, Algérieen
dc.contributor.institutionCIMAP, Centre de recherche sur les ions, les matériaux et la photonique, CEA, UMR 6252 CNRS, ENSICAEN, UCBN, 6-Boulevard du Maréchal Juin, 14050 Caen cedex, France.en
dc.contributor.institutionDepartment of Physics, College of Science, University of Bahrain, PO Box 32038, Kingdom of Bahrain.en
kaust.authorZiani, Ahmeden
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