Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography

Handle URI:
http://hdl.handle.net/10754/627522
Title:
Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography
Authors:
Tu, Kun-Hua; Fernandez Martin, Eduardo; almasi, hamid; Wang, Weigang; Navas Otero, David; Ntetsikas, Konstantinos ( 0000-0002-9236-931X ) ; Moschovas, Dimitrios; Avgeropoulos, Apostolos; Ross, Caroline A ( 0000-0003-2262-1249 )
Abstract:
Dense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.
KAUST Department:
KAUST Catalysis Center (KCC); Physical Sciences and Engineering (PSE) Division
Citation:
Tu K-H, Fernandez Martin E, almasi hamid, Wang W, Navas Otero D, et al. (2018) Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography. Nanotechnology. Available: http://dx.doi.org/10.1088/1361-6528/aabce8.
Publisher:
IOP Publishing
Journal:
Nanotechnology
Issue Date:
10-Apr-2018
DOI:
10.1088/1361-6528/aabce8
Type:
Article
ISSN:
0957-4484; 1361-6528
Sponsors:
C-SPIN, a STARnet Center of DARPA and MARCO
Additional Links:
http://iopscience.iop.org/article/10.1088/1361-6528/aabce8
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; KAUST Catalysis Center (KCC)

Full metadata record

DC FieldValue Language
dc.contributor.authorTu, Kun-Huaen
dc.contributor.authorFernandez Martin, Eduardoen
dc.contributor.authoralmasi, hamiden
dc.contributor.authorWang, Weigangen
dc.contributor.authorNavas Otero, Daviden
dc.contributor.authorNtetsikas, Konstantinosen
dc.contributor.authorMoschovas, Dimitriosen
dc.contributor.authorAvgeropoulos, Apostolosen
dc.contributor.authorRoss, Caroline Aen
dc.date.accessioned2018-04-16T11:27:43Z-
dc.date.available2018-04-16T11:27:43Z-
dc.date.issued2018-04-10en
dc.identifier.citationTu K-H, Fernandez Martin E, almasi hamid, Wang W, Navas Otero D, et al. (2018) Magnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithography. Nanotechnology. Available: http://dx.doi.org/10.1088/1361-6528/aabce8.en
dc.identifier.issn0957-4484en
dc.identifier.issn1361-6528en
dc.identifier.doi10.1088/1361-6528/aabce8en
dc.identifier.urihttp://hdl.handle.net/10754/627522-
dc.description.abstractDense arrays of pillars, with diameters of 64 and 25 nm, were made from a perpendicular CoFeB magnetic tunnel junction thin film stack using block copolymer lithography. While the soft layer and hard layer in the 64 nm pillars reverse at different fields, the reversal of the two layers in the 25 nm pillars could not be distinguished, attributed to the strong interlayer magnetostatic coupling. First order reversal curves were used to identify the steps that occur during switching, and the thermal stability and effective switching volume were determined from scan rate dependent hysteresis measurements.en
dc.description.sponsorshipC-SPIN, a STARnet Center of DARPA and MARCOen
dc.publisherIOP Publishingen
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/1361-6528/aabce8en
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6528/aabce8en
dc.subjectNanolithographyen
dc.subjectNanomagnetismen
dc.subjectMagnetic Tunnel Junctionen
dc.titleMagnetic Reversal and Thermal Stability of CoFeB Perpendicular Magnetic Tunnel Junction Arrays Patterned by Block Copolymer Lithographyen
dc.typeArticleen
dc.contributor.departmentKAUST Catalysis Center (KCC)en
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNanotechnologyen
dc.eprint.versionPost-printen
dc.contributor.institutionMaterials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Bldg.13-4025, Cambridge, Massachusetts, 02139, UNITED STATES.en
dc.contributor.institutionDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, UNITED STATES.en
dc.contributor.institutionPhysics, University of Arizona, 1118 E 4st St, Tucson, Arizona, 85721-0001, UNITED STATES.en
dc.contributor.institutionPhysics, University of Arizona, Tucson, Arizona, UNITED STATES.en
dc.contributor.institutionUniversidade do Porto Instituto de Fisica dos Materiais Instituto de Nanociencia e Nanotecnologia, Porto, PORTUGAL.en
dc.contributor.institutionMaterials Science Engineering, University of Ioannina, Ioannina, GREECE.en
dc.contributor.institutionDepartment of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA, UNITED STATES.en
kaust.authorNtetsikas, Konstantinosen
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