Large-area and bright pulsed electroluminescence in monolayer semiconductors

Handle URI:
http://hdl.handle.net/10754/627520
Title:
Large-area and bright pulsed electroluminescence in monolayer semiconductors
Authors:
Lien, Der-Hsien ( 0000-0001-6774-2074 ) ; Amani, Matin ( 0000-0002-7912-6559 ) ; Desai, Sujay B. ( 0000-0001-6447-2769 ) ; Ahn, Geun Ho ( 0000-0002-4761-7804 ) ; Han, Kevin ( 0000-0002-4028-2108 ) ; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Ager, Joel W. ( 0000-0001-9334-9751 ) ; Wu, Ming C. ( 0000-0003-4808-6686 ) ; Javey, Ali ( 0000-0001-7214-7931 )
Abstract:
Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; KAUST Solar Center (KSC); Physical Sciences and Engineering (PSE) Division
Citation:
Lien D-H, Amani M, Desai SB, Ahn GH, Han K, et al. (2018) Large-area and bright pulsed electroluminescence in monolayer semiconductors. Nature Communications 9. Available: http://dx.doi.org/10.1038/s41467-018-03218-8.
Publisher:
Springer Nature
Journal:
Nature Communications
Issue Date:
4-Apr-2018
DOI:
10.1038/s41467-018-03218-8
Type:
Article
ISSN:
2041-1723
Sponsors:
We thank A.B. Sachid for advice on device simulations. Device fabrication and characterization were funded by the National Science Foundation (NSF) under program number 1623038. Materials growth was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under contract no.DE-AC02-05CH11231 within the Electronic Materials Program (KC1201). S.B.D. acknowledges the Lam Research Graduate Fellowship.
Additional Links:
https://www.nature.com/articles/s41467-018-03218-8
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLien, Der-Hsienen
dc.contributor.authorAmani, Matinen
dc.contributor.authorDesai, Sujay B.en
dc.contributor.authorAhn, Geun Hoen
dc.contributor.authorHan, Kevinen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorAger, Joel W.en
dc.contributor.authorWu, Ming C.en
dc.contributor.authorJavey, Alien
dc.date.accessioned2018-04-16T11:27:43Z-
dc.date.available2018-04-16T11:27:43Z-
dc.date.issued2018-04-04en
dc.identifier.citationLien D-H, Amani M, Desai SB, Ahn GH, Han K, et al. (2018) Large-area and bright pulsed electroluminescence in monolayer semiconductors. Nature Communications 9. Available: http://dx.doi.org/10.1038/s41467-018-03218-8.en
dc.identifier.issn2041-1723en
dc.identifier.doi10.1038/s41467-018-03218-8en
dc.identifier.urihttp://hdl.handle.net/10754/627520-
dc.description.abstractTransition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS, WS, MoSe, and WSe) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.en
dc.description.sponsorshipWe thank A.B. Sachid for advice on device simulations. Device fabrication and characterization were funded by the National Science Foundation (NSF) under program number 1623038. Materials growth was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division under contract no.DE-AC02-05CH11231 within the Electronic Materials Program (KC1201). S.B.D. acknowledges the Lam Research Graduate Fellowship.en
dc.publisherSpringer Natureen
dc.relation.urlhttps://www.nature.com/articles/s41467-018-03218-8en
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleLarge-area and bright pulsed electroluminescence in monolayer semiconductorsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNature Communicationsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, , United Statesen
dc.contributor.institutionElectrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, , United Statesen
kaust.authorHe, Jr-Hauen
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