Surface Passivation of CIGS Solar Cells Using Gallium Oxide

Handle URI:
http://hdl.handle.net/10754/627470
Title:
Surface Passivation of CIGS Solar Cells Using Gallium Oxide
Authors:
Garud, Siddhartha ( 0000-0003-2308-3307 ) ; Gampa, Nikhil; Allen, Thomas G.; Kotipalli, Ratan ( 0000-0002-6193-1621 ) ; Flandre, Denis ( 0000-0001-5298-5196 ) ; Batuk, Maria ( 0000-0003-1411-9785 ) ; Hadermann, Joke ( 0000-0002-1756-2566 ) ; Meuris, Marc; Poortmans, Jef ( 0000-0003-2077-2545 ) ; Smets, Arno; Vermang, Bart ( 0000-0003-2669-2087 )
Abstract:
This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).
KAUST Department:
KAUST Solar Center; King Abdullah University of Science and Technology; Thuwal 23955-6900 Saudi Arabia
Citation:
Garud S, Gampa N, Allen TG, Kotipalli R, Flandre D, et al. (2018) Surface Passivation of CIGS Solar Cells Using Gallium Oxide. physica status solidi (a): 1700826. Available: http://dx.doi.org/10.1002/pssa.201700826.
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (a)
Issue Date:
27-Feb-2018
DOI:
10.1002/pssa.201700826
Type:
Article
ISSN:
1862-6300
Sponsors:
The work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201700826/full
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorGarud, Siddharthaen
dc.contributor.authorGampa, Nikhilen
dc.contributor.authorAllen, Thomas G.en
dc.contributor.authorKotipalli, Ratanen
dc.contributor.authorFlandre, Denisen
dc.contributor.authorBatuk, Mariaen
dc.contributor.authorHadermann, Jokeen
dc.contributor.authorMeuris, Marcen
dc.contributor.authorPoortmans, Jefen
dc.contributor.authorSmets, Arnoen
dc.contributor.authorVermang, Barten
dc.date.accessioned2018-04-15T07:13:36Z-
dc.date.available2018-04-15T07:13:36Z-
dc.date.issued2018-02-27en
dc.identifier.citationGarud S, Gampa N, Allen TG, Kotipalli R, Flandre D, et al. (2018) Surface Passivation of CIGS Solar Cells Using Gallium Oxide. physica status solidi (a): 1700826. Available: http://dx.doi.org/10.1002/pssa.201700826.en
dc.identifier.issn1862-6300en
dc.identifier.doi10.1002/pssa.201700826en
dc.identifier.urihttp://hdl.handle.net/10754/627470-
dc.description.abstractThis work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).en
dc.description.sponsorshipThe work published in this paper was supported by the European Research Council (ERC) under the Union's Horizon 2020 research and innovation programme (grant agreement No 715027). The authors would also like to thank Dr. Marcel Simor (Solliance) for the CIGS layer fabrication and Prof. Johan Lauwaert (Universtiy of Ghent) for his guidance on DLTS measurements.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201700826/fullen
dc.titleSurface Passivation of CIGS Solar Cells Using Gallium Oxideen
dc.typeArticleen
dc.contributor.departmentKAUST Solar Center; King Abdullah University of Science and Technology; Thuwal 23955-6900 Saudi Arabiaen
dc.identifier.journalphysica status solidi (a)en
dc.contributor.institutionDelft University of Technology; 2628 CD Delft The Netherlandsen
dc.contributor.institutionImec - Partner in Solliance; 3000 Leuven Belgiumen
dc.contributor.institutionHelmholtz Zentrum Berlin; 12489 Berlin Germanyen
dc.contributor.institutionAustralian National University; Canberra ACT 0200 Australiaen
dc.contributor.institutionUniversité catholique de Louvain; ICTEAM Institute; 1348 Louvain-la-Neuve Belgiumen
dc.contributor.institutionUniversity of Antwerp; Groenenborger Groenenborgerlaan 171 2020 Antwerp Belgiumen
dc.contributor.institutionImec Division IMOMEC - Partner in Solliance; 3590 Hasselt Belgiumen
dc.contributor.institutionDepartment of Electrical Engineering (ESAT); KU Leuven; 3001 Leuven Belgiumen
dc.contributor.institutionInstitute for Material Research (IMO) Hasselt University; 3590 Hasselt Belgiumen
dc.contributor.institutionFaculty of Engineering Technology; Hasselt University; 3590 Hasselt Belgiumen
kaust.authorAllen, Thomas G.en
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