Self-Aligned and Scalable Growth of Monolayer WSe2 -MoS2 Lateral Heterojunctions

Handle URI:
http://hdl.handle.net/10754/627467
Title:
Self-Aligned and Scalable Growth of Monolayer WSe2 -MoS2 Lateral Heterojunctions
Authors:
Li, Ming-yang; Pu, Jiang; Huang, Jing-Kai; Miyauchi, Yuhei; Matsuda, Kazunari; Takenobu, Taishi; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p–n junction without the necessity of applying an external voltage. However, no scalable processes are reported to construct the devices with such lateral heterostructures. Here, a scalable strategy, two-step and location-selective chemical vapor deposition, is reported to synthesize self-aligned WSe2–MoS2 monolayer lateral heterojunction arrays and demonstrates their light-emitting devices. The proposed fabrication process enables the growth of high-quality interfaces and the first successful observation of electroluminescence at the WSe2–MoS2 lateral heterojunction. The electroluminescence study has confirmed the type-I alignment at the interface rather than commonly believed type-II alignment. This self-aligned growth process paves the way for constructing various 2D lateral heterostructures in a scalable manner, practically important for integrated 2D circuit applications.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Li M-Y, Pu J, Huang J-K, Miyauchi Y, Matsuda K, et al. (2018) Self-Aligned and Scalable Growth of Monolayer WSe2 -MoS2 Lateral Heterojunctions. Advanced Functional Materials: 1706860. Available: http://dx.doi.org/10.1002/adfm.201706860.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
28-Feb-2018
DOI:
10.1002/adfm.201706860
Type:
Article
ISSN:
1616-301X
Sponsors:
M.-Y.L. and J.P. contributed equally to this work. M.-Y.L., J.-K.H., and L.-J.L. acknowledge support from the King Abdullah University of Science and Technology (KAUST) and Academia Sinica. T.T. acknowledges support from JSPS-KAKENHI (Grant Numbers JP17H01069, JP16K13618, JP15K21721, JP26102012, and JP25000003). J.P. was supported by JSPS-KAKENHI (Grant Number JP17H06736). K.M. was partially supported by JSPS-KAKENHI (Grant Numbers 26107522, JP16H00910, and JP16H06331) and the Asahi glass foundation. Y.M. was partially supported by JSPS-KAKENHI (Grant Numbers JP16H00911, JP15K13337, JP15H05408, and JP17K19055, by JST CREST(Grant Number JPMJCR16F3), and by the Murata Science Foundation.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201706860/abstract
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Ming-yangen
dc.contributor.authorPu, Jiangen
dc.contributor.authorHuang, Jing-Kaien
dc.contributor.authorMiyauchi, Yuheien
dc.contributor.authorMatsuda, Kazunarien
dc.contributor.authorTakenobu, Taishien
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2018-04-15T07:13:36Z-
dc.date.available2018-04-15T07:13:36Z-
dc.date.issued2018-02-28en
dc.identifier.citationLi M-Y, Pu J, Huang J-K, Miyauchi Y, Matsuda K, et al. (2018) Self-Aligned and Scalable Growth of Monolayer WSe2 -MoS2 Lateral Heterojunctions. Advanced Functional Materials: 1706860. Available: http://dx.doi.org/10.1002/adfm.201706860.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201706860en
dc.identifier.urihttp://hdl.handle.net/10754/627467-
dc.description.abstract2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p–n junction without the necessity of applying an external voltage. However, no scalable processes are reported to construct the devices with such lateral heterostructures. Here, a scalable strategy, two-step and location-selective chemical vapor deposition, is reported to synthesize self-aligned WSe2–MoS2 monolayer lateral heterojunction arrays and demonstrates their light-emitting devices. The proposed fabrication process enables the growth of high-quality interfaces and the first successful observation of electroluminescence at the WSe2–MoS2 lateral heterojunction. The electroluminescence study has confirmed the type-I alignment at the interface rather than commonly believed type-II alignment. This self-aligned growth process paves the way for constructing various 2D lateral heterostructures in a scalable manner, practically important for integrated 2D circuit applications.en
dc.description.sponsorshipM.-Y.L. and J.P. contributed equally to this work. M.-Y.L., J.-K.H., and L.-J.L. acknowledge support from the King Abdullah University of Science and Technology (KAUST) and Academia Sinica. T.T. acknowledges support from JSPS-KAKENHI (Grant Numbers JP17H01069, JP16K13618, JP15K21721, JP26102012, and JP25000003). J.P. was supported by JSPS-KAKENHI (Grant Number JP17H06736). K.M. was partially supported by JSPS-KAKENHI (Grant Numbers 26107522, JP16H00910, and JP16H06331) and the Asahi glass foundation. Y.M. was partially supported by JSPS-KAKENHI (Grant Numbers JP16H00911, JP15K13337, JP15H05408, and JP17K19055, by JST CREST(Grant Number JPMJCR16F3), and by the Murata Science Foundation.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201706860/abstracten
dc.subjectBand alignmentsen
dc.subjectLateral heterojunctionsen
dc.subjectLight-emitting devicesen
dc.subjectSelf-aligned and scalable growthen
dc.subjectTransition metal dichalcogenidesen
dc.titleSelf-Aligned and Scalable Growth of Monolayer WSe2 -MoS2 Lateral Heterojunctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionResearch Center for Applied Sciences; Academia Sinica; Taipei 11529 Taiwanen
dc.contributor.institutionDepartment of Applied Physics; Nagoya University; Nagoya 464-8603 Japanen
dc.contributor.institutionInstitute of Advanced Energy; Kyoto University; Uji Kyoto 611-0011 Japanen
kaust.authorLi, Ming-yangen
kaust.authorHuang, Jing-Kaien
kaust.authorLi, Lain-Jongen
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