Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors

Handle URI:
http://hdl.handle.net/10754/627464
Title:
Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors
Authors:
Wei, Binbin; Mei, Gui; Liang, Hanfeng ( 0000-0002-1778-3975 ) ; Qi, Zhengbing; Zhang, Dongfang; Shen, Hao; Wang, Zhoucheng
Abstract:
Transition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm−2 at 1.0 mA cm−2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm−3 and a maximum power density of 6.6 W cm−3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program
Citation:
Wei B, Mei G, Liang H, Qi Z, Zhang D, et al. (2018) Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors. Journal of Power Sources 385: 39–44. Available: http://dx.doi.org/10.1016/j.jpowsour.2018.03.023.
Publisher:
Elsevier BV
Journal:
Journal of Power Sources
Issue Date:
18-Mar-2018
DOI:
10.1016/j.jpowsour.2018.03.023
Type:
Article
ISSN:
0378-7753
Sponsors:
This work was financially supported by the National Nature Science Foundation of China (No. 51372212).
Additional Links:
http://www.sciencedirect.com/science/article/pii/S0378775318302477
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorWei, Binbinen
dc.contributor.authorMei, Guien
dc.contributor.authorLiang, Hanfengen
dc.contributor.authorQi, Zhengbingen
dc.contributor.authorZhang, Dongfangen
dc.contributor.authorShen, Haoen
dc.contributor.authorWang, Zhouchengen
dc.date.accessioned2018-04-15T07:13:36Z-
dc.date.available2018-04-15T07:13:36Z-
dc.date.issued2018-03-18en
dc.identifier.citationWei B, Mei G, Liang H, Qi Z, Zhang D, et al. (2018) Porous CrN thin films by selectively etching CrCuN for symmetric supercapacitors. Journal of Power Sources 385: 39–44. Available: http://dx.doi.org/10.1016/j.jpowsour.2018.03.023.en
dc.identifier.issn0378-7753en
dc.identifier.doi10.1016/j.jpowsour.2018.03.023en
dc.identifier.urihttp://hdl.handle.net/10754/627464-
dc.description.abstractTransition metal nitrides are regarded as a new class of excellent electrode materials for high-performance supercapacitors due to their superior chemical stability and excellent electrical conductivity. We synthesize successfully the porous CrN thin films for binder-free supercapacitor electrodes by reactive magnetron co-sputtering and selective chemical etching. The porous CrN thin film electrodes exhibit high-capacitance performance (31.3 mF cm−2 at 1.0 mA cm−2) and reasonable cycling stability (94% retention after 20000 cycles). Moreover, the specific capacitance is more than two-fold higher than that of the CrN thin film electrodes in previous work. In addition, a symmetric supercapacitor device with a maximum energy density of 14.4 mWh cm−3 and a maximum power density of 6.6 W cm−3 is achieved. These findings demonstrate that the porous CrN thin films will have potential applications in supercapacitors.en
dc.description.sponsorshipThis work was financially supported by the National Nature Science Foundation of China (No. 51372212).en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0378775318302477en
dc.subjectTransition metal nitrideen
dc.subjectPorous CrN thin filmen
dc.subjectMagnetron co-sputteringen
dc.subjectSelective chemical etchingen
dc.subjectSymmetric supercapacitoren
dc.titlePorous CrN thin films by selectively etching CrCuN for symmetric supercapacitorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalJournal of Power Sourcesen
dc.contributor.institutionCollege of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, People's Republic of Chinaen
dc.contributor.institutionSchool of Materials Science and Engineering, Xiamen University of Technology, Xiamen 361024, People's Republic of Chinaen
kaust.authorLiang, Hanfengen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.