High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative

Handle URI:
http://hdl.handle.net/10754/627348
Title:
High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative
Authors:
Huang, Wentao; Lin, Yen-Hung; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 )
Abstract:
Combining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; KAUST Solar Center (KSC)
Citation:
Huang W, Lin Y-H, Anthopoulos TD (2018) High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.8b00121.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
13-Mar-2018
DOI:
10.1021/acsami.8b00121
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
The work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript.
Additional Links:
https://pubs.acs.org/doi/10.1021/acsami.8b00121
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; KAUST Solar Center (KSC)

Full metadata record

DC FieldValue Language
dc.contributor.authorHuang, Wentaoen
dc.contributor.authorLin, Yen-Hungen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2018-03-18T11:06:35Z-
dc.date.available2018-03-18T11:06:35Z-
dc.date.issued2018-03-13en
dc.identifier.citationHuang W, Lin Y-H, Anthopoulos TD (2018) High Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivative. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.8b00121.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.8b00121en
dc.identifier.urihttp://hdl.handle.net/10754/627348-
dc.description.abstractCombining high charge carrier mobility with ambipolar transport in light-absorbing organic semiconductors is highly desirable as it leads to enhanced charge photogeneration, and hence improved performance, in various optoelectronic devices including solar cells and photodetectors. Here we report the development of [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM)-based ultraviolet (UV) phototransistors with balanced electron and hole transport characteristics. The latter is achieved by fine-tuning the source–drain electrode work function using a self-assembled monolayer. Opto/electrical characterization of as-prepared ambipolar PC61BM phototransistors reveals promising photoresponse, particularly in the UV-A region (315–400 nm), with a maximum photosensitivity and responsivity of 9 × 103 and 3 × 103 A/W, respectively. Finally, the temporal response of the PC61BM phototransistors is found to be high despite the long channel length (10 s of μm) with typical switching times of <2 ms.en
dc.description.sponsorshipThe work reported here was supported by the King Abdullah University of Science and Technology (KAUST). W.H., Y.-H.L., and T.D.A. designed the experiments, analyzed the experimental data, and wrote the article. W.H., and Y.-H.L., carried out the experimental work. All authors have given approval to the final version of the manuscript.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsami.8b00121en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsami.8b00121.en
dc.subjectambipolar transporten
dc.subjectfullerenesen
dc.subjectPCBMen
dc.subjectphototransistoren
dc.subjectUV photodetectoren
dc.titleHigh Speed Ultraviolet Phototransistors Based on an Ambipolar Fullerene Derivativeen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.identifier.journalACS Applied Materials & Interfacesen
dc.eprint.versionPost-printen
dc.contributor.institutionCentre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW, U.K.en
kaust.authorAnthopoulos, Thomas D.en
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