Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

Handle URI:
http://hdl.handle.net/10754/627336
Title:
Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes
Authors:
Tangi, Malleswararao ( 0000-0003-1141-4324 ) ; Mishra, Pawan ( 0000-0001-9764-6016 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Prabaswara, Aditya ( 0000-0003-1892-671X ) ; Zhao, Chao ( 0000-0002-9582-1068 ) ; Priante, Davide ( 0000-0003-4540-2188 ) ; Min, Jung-Wook; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Photonics Laboratory
Citation:
Tangi M, Mishra P, Janjua B, Prabaswara A, Zhao C, et al. (2018) Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes. Journal of Applied Physics 123: 105702. Available: http://dx.doi.org/10.1063/1.5021290.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
KAUST Grant Number:
BAS/1/1614–01-01
Issue Date:
9-Mar-2018
DOI:
10.1063/1.5021290
Type:
Article
ISSN:
0021-8979; 1089-7550
Sponsors:
We acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614–01-01, and MBE equipment funding, C/M-20000–12-001–77.
Additional Links:
https://aip.scitation.org/doi/10.1063/1.5021290
Appears in Collections:
Articles; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTangi, Malleswararaoen
dc.contributor.authorMishra, Pawanen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorPriante, Davideen
dc.contributor.authorMin, Jung-Wooken
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2018-03-15T11:35:53Z-
dc.date.available2018-03-15T11:35:53Z-
dc.date.issued2018-03-09en
dc.identifier.citationTangi M, Mishra P, Janjua B, Prabaswara A, Zhao C, et al. (2018) Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes. Journal of Applied Physics 123: 105702. Available: http://dx.doi.org/10.1063/1.5021290.en
dc.identifier.issn0021-8979en
dc.identifier.issn1089-7550en
dc.identifier.doi10.1063/1.5021290en
dc.identifier.urihttp://hdl.handle.net/10754/627336-
dc.description.abstractWe study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.en
dc.description.sponsorshipWe acknowledge the financial support from the King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614–01-01, and MBE equipment funding, C/M-20000–12-001–77.en
dc.publisherAIP Publishingen
dc.relation.urlhttps://aip.scitation.org/doi/10.1063/1.5021290en
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics and may be found at http://doi.org/10.1063/1.5021290.en
dc.subjectMicroscopyen
dc.subjectSpectroscopyen
dc.subjectCondensed matter propertiesen
dc.subjectPiezoelectricityen
dc.subjectLight emitting diodesen
dc.subjectElectrical propertiesen
dc.subjectChemical analysisen
dc.subjectLuminescenceen
dc.subjectSemiconductorsen
dc.subjectElectron microscopyen
dc.titleRole of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorTangi, Malleswararaoen
kaust.authorMishra, Pawanen
kaust.authorJanjua, Bilalen
kaust.authorPrabaswara, Adityaen
kaust.authorZhao, Chaoen
kaust.authorPriante, Davideen
kaust.authorMin, Jung-Wooken
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614–01-01en
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