Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant

Handle URI:
http://hdl.handle.net/10754/627245
Title:
Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant
Authors:
Matsuoka, Hirofumi; Kanahashi, Kaito; Tanaka, Naoki; Shoji, Yoshiaki; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Pu, Jiang; Ito, Hiroshi; Ohta, Hiromichi; Fukushima, Takanori; Takenobu, Taishi
Abstract:
Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Matsuoka H, Kanahashi K, Tanaka N, Shoji Y, Li L-J, et al. (2018) Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant. Japanese Journal of Applied Physics 57: 02CB15. Available: http://dx.doi.org/10.7567/jjap.57.02cb15.
Publisher:
Japan Society of Applied Physics
Journal:
Japanese Journal of Applied Physics
Issue Date:
18-Jan-2018
DOI:
10.7567/jjap.57.02cb15
Type:
Article
ISSN:
0021-4922; 1347-4065
Sponsors:
T.T. was partially supported by Grants-in-Aid from MEXT (JP26102012 "π-System Figuration", JP17H01069, JP16K13618, JP15K21721, and JP25000003). K.K. and J.P. acknowledge the Leading Graduate Program in Science and Engineering, Waseda University from the Ministry of Education, Culture, Sports, Science and Technology (MEST) of Japan. T.F. was supported by Grant-in-Aid for Scientific Research on Innovative Areas (JP26102008 "π-System Figuration") and "Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials" from MEXT. Y.S. was supported by the Asahi Glass Foundation. This work was also supported in part by the Network Joint Research Center for Materials and Devices.
Additional Links:
http://iopscience.iop.org/article/10.7567/JJAP.57.02CB15/meta
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMatsuoka, Hirofumien
dc.contributor.authorKanahashi, Kaitoen
dc.contributor.authorTanaka, Naokien
dc.contributor.authorShoji, Yoshiakien
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorPu, Jiangen
dc.contributor.authorIto, Hiroshien
dc.contributor.authorOhta, Hiromichien
dc.contributor.authorFukushima, Takanorien
dc.contributor.authorTakenobu, Taishien
dc.date.accessioned2018-03-11T06:54:10Z-
dc.date.available2018-03-11T06:54:10Z-
dc.date.issued2018-01-18en
dc.identifier.citationMatsuoka H, Kanahashi K, Tanaka N, Shoji Y, Li L-J, et al. (2018) Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant. Japanese Journal of Applied Physics 57: 02CB15. Available: http://dx.doi.org/10.7567/jjap.57.02cb15.en
dc.identifier.issn0021-4922en
dc.identifier.issn1347-4065en
dc.identifier.doi10.7567/jjap.57.02cb15en
dc.identifier.urihttp://hdl.handle.net/10754/627245-
dc.description.abstractHole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.en
dc.description.sponsorshipT.T. was partially supported by Grants-in-Aid from MEXT (JP26102012 "π-System Figuration", JP17H01069, JP16K13618, JP15K21721, and JP25000003). K.K. and J.P. acknowledge the Leading Graduate Program in Science and Engineering, Waseda University from the Ministry of Education, Culture, Sports, Science and Technology (MEST) of Japan. T.F. was supported by Grant-in-Aid for Scientific Research on Innovative Areas (JP26102008 "π-System Figuration") and "Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials" from MEXT. Y.S. was supported by the Asahi Glass Foundation. This work was also supported in part by the Network Joint Research Center for Materials and Devices.en
dc.publisherJapan Society of Applied Physicsen
dc.relation.urlhttp://iopscience.iop.org/article/10.7567/JJAP.57.02CB15/metaen
dc.titleChemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidanten
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJapanese Journal of Applied Physicsen
dc.contributor.institutionDepartment of Applied Physics, Nagoya University, Nagoya 464-8303, Japanen
dc.contributor.institutionDepartment of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japanen
dc.contributor.institutionLaboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japanen
dc.contributor.institutionResearch Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japanen
kaust.authorLi, Lain-Jongen
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