Giant photoresponse in quantized SrRuO3 monolayer at oxide interfaces

Handle URI:
http://hdl.handle.net/10754/627132
Title:
Giant photoresponse in quantized SrRuO3 monolayer at oxide interfaces
Authors:
Liu, Heng-Jui; Wang, Jing-Ching; Cho, Deok-Yong; Ho, Kang Ting ( 0000-0001-6622-8313 ) ; Lin, Jheng-Cyuan; Huang, Bo-Chao; Fang, Yue-Wen; Zhu, Yuan-Min; Zhan, Qian; Xie, Lin; Pan, Xiao-Qing; Chiu, Ya-Ping; Duan, Chun-Gang; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Chu, Ying-Hao
Abstract:
The photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; KAUST Solar Center (KSC)
Citation:
Liu H-J, Wang J-C, Cho D-Y, Ho K-T, Lin J-C, et al. (2018) Giant Photoresponse in Quantized SrRuO3 Monolayer at Oxide Interfaces. ACS Photonics. Available: http://dx.doi.org/10.1021/acsphotonics.7b01339.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Photonics
Issue Date:
1-Feb-2018
DOI:
10.1021/acsphotonics.7b01339
Type:
Article
ISSN:
2330-4022; 2330-4022
Sponsors:
The authors gratefully acknowledge the financial support by the Ministry of Science and Technology under Grant No. MOST 103-2119-M-009 -003 -MY3 and MOST 106-2112-M-005-001-. The work is supported in part by Ministry of Science, ICT and Future Planning of Korea under Grant No. NRF-2015R1C1A1A02037514. The work at University of Science and Technology Beijing is supported by National Natural Science Foundation of China with Grant Nos. 51571021 and 51371031. The work at Nanjing University is supported through the National Basic Research Program of China under Grant No. 2015CB654900. The work at University of California-Irvine is supported by the National Science Foundation through the grant No. DMR-1506535.
Additional Links:
https://pubs.acs.org/doi/10.1021/acsphotonics.7b01339
Appears in Collections:
Articles; Electrical Engineering Program; KAUST Solar Center (KSC); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLiu, Heng-Juien
dc.contributor.authorWang, Jing-Chingen
dc.contributor.authorCho, Deok-Yongen
dc.contributor.authorHo, Kang Tingen
dc.contributor.authorLin, Jheng-Cyuanen
dc.contributor.authorHuang, Bo-Chaoen
dc.contributor.authorFang, Yue-Wenen
dc.contributor.authorZhu, Yuan-Minen
dc.contributor.authorZhan, Qianen
dc.contributor.authorXie, Linen
dc.contributor.authorPan, Xiao-Qingen
dc.contributor.authorChiu, Ya-Pingen
dc.contributor.authorDuan, Chun-Gangen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorChu, Ying-Haoen
dc.date.accessioned2018-02-14T11:52:53Z-
dc.date.available2018-02-14T11:52:53Z-
dc.date.issued2018-02-01en
dc.identifier.citationLiu H-J, Wang J-C, Cho D-Y, Ho K-T, Lin J-C, et al. (2018) Giant Photoresponse in Quantized SrRuO3 Monolayer at Oxide Interfaces. ACS Photonics. Available: http://dx.doi.org/10.1021/acsphotonics.7b01339.en
dc.identifier.issn2330-4022en
dc.identifier.issn2330-4022en
dc.identifier.doi10.1021/acsphotonics.7b01339en
dc.identifier.urihttp://hdl.handle.net/10754/627132-
dc.description.abstractThe photoelectric effect in semiconductors is the main mechanism for most modern optoelectronic devices, in which the adequate bandgap plays the key role for acquiring high photoresponse. Among numerous material categories applied in this field, the complex oxides exhibit great possibilities because they present a wide distribution of band gaps for absorbing light with any wavelength. Their physical properties and lattice structures are always strongly coupled and sensitive to light illumination. Moreover, the confinement of dimensionality of the complex oxides in the heterostructures can provide more diversities in designing and modulating the band structures. On the basis of this perspective, we have chosen itinerary ferromagnetic SrRuO3 as the model material, and fabricated it in one-unit-cell thickness in order to open a small band gap for effective utilization of visible light. By inserting this SrRuO3 monolayer at the interface of the well-developed two-dimensional electron gas system (LaAlO3/SrTiO3), the resistance of the monolayer can be further revealed. In addition, a giant enhancement (>300%) of photoresponse under illumination of visible light with power density of 500 mW/cm2 is also observed. Such can be ascribed to the further modulation of band structure of the SrRuO3 monolayer under the illumination, confirmed by cross-section scanning tunneling microscopy (XSTM). Therefore, this study demonstrates a simple route to design and explore the potential low dimensional oxide materials for future optoelectronic devices.en
dc.description.sponsorshipThe authors gratefully acknowledge the financial support by the Ministry of Science and Technology under Grant No. MOST 103-2119-M-009 -003 -MY3 and MOST 106-2112-M-005-001-. The work is supported in part by Ministry of Science, ICT and Future Planning of Korea under Grant No. NRF-2015R1C1A1A02037514. The work at University of Science and Technology Beijing is supported by National Natural Science Foundation of China with Grant Nos. 51571021 and 51371031. The work at Nanjing University is supported through the National Basic Research Program of China under Grant No. 2015CB654900. The work at University of California-Irvine is supported by the National Science Foundation through the grant No. DMR-1506535.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acsphotonics.7b01339en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acsphotonics.7b01339.en
dc.subjectcomplex oxide heterostructuresen
dc.subjectinterface engineeringen
dc.subjectoptoelectronicsen
dc.subjectphotoresponseen
dc.subjectSrRuO3 monolayeren
dc.titleGiant photoresponse in quantized SrRuO3 monolayer at oxide interfacesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.identifier.journalACS Photonicsen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwanen
dc.contributor.institutionDepartment of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwanen
dc.contributor.institutionIPIT and Department of Physics, Chonbuk National University, Jeonju 54896, Republic of Koreaen
dc.contributor.institutionInstitute of Physics, Academia Sinica, Taipei 11529, Taiwanen
dc.contributor.institutionNanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587, Japanen
dc.contributor.institutionKey Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, Chinaen
dc.contributor.institutionNational Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, Chinaen
dc.contributor.institutionDepartment of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, Chinaen
dc.contributor.institutionDepartment of Chemical Engineering and Materials Science, University of California, Irvine, California 92697, United Statesen
dc.contributor.institutionNational Laboratory of Solid State Microstructures and College of Engineering and Applied Sciences, Nanjing University, Nanjing, Jiangsu 210093, Chinaen
dc.contributor.institutionDepartment of Physics and Astronomy, University of California-Irvine, Irvine, California 92697, United Statesen
dc.contributor.institutionDepartment of Physics, National Taiwan University, Taipei 10617, Taiwanen
dc.contributor.institutionDepartment of Materials Science and Engineering, National Chiao Tung University Hsinchu 30010, Taiwanen
kaust.authorHo, Kang Tingen
kaust.authorHe, Jr-Hauen
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