Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3

Handle URI:
http://hdl.handle.net/10754/627063
Title:
Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3
Authors:
Cui, Chaojie; Hu, Weijin ( 0000-0001-5862-1481 ) ; Yan, Xingxu; Addiego, Christopher; Gao, Wenpei; Wang, Yao; Wang, Zhe; Li, Linze; Cheng, Yingchun; Li, Peng ( 0000-0001-8633-9045 ) ; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Wu, Tao ( 0000-0003-0845-4827 ) ; Zhu, Wenguang; Pan, Xiaoqing; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intra-layer ferroelectricity in two-dimensional (2D) van der Waals layered -In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. Based on the in-plane switchable diode effect and the narrow bandgap (~1.3 eV) of ferroelectric In2Se3, a prototypical non-volatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; KAUST Catalysis Center (KCC)
Citation:
Cui C, Hu W-J, Yan X, Addiego C, Gao W, et al. (2018) Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3. Nano Letters. Available: http://dx.doi.org/10.1021/acs.nanolett.7b04852.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
30-Jan-2018
DOI:
10.1021/acs.nanolett.7b04852
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
L.J.L. thanks the support from King Abdullah University of Science and Technology (Saudi Arabia). The work at University of California - Irvine was supported by the Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Science and Engineering, under Grant under Grant No. DE-SC0014430, and the Irvine Materials Research Institute (IMRI). We would like to thank Dr. Toshi Aoki from IMRI for his help on S/TEM experiments.
Additional Links:
https://pubs.acs.org/doi/10.1021/acs.nanolett.7b04852
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; KAUST Catalysis Center (KCC)

Full metadata record

DC FieldValue Language
dc.contributor.authorCui, Chaojieen
dc.contributor.authorHu, Weijinen
dc.contributor.authorYan, Xingxuen
dc.contributor.authorAddiego, Christopheren
dc.contributor.authorGao, Wenpeien
dc.contributor.authorWang, Yaoen
dc.contributor.authorWang, Zheen
dc.contributor.authorLi, Linzeen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorLi, Pengen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorWu, Taoen
dc.contributor.authorZhu, Wenguangen
dc.contributor.authorPan, Xiaoqingen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2018-02-07T07:02:28Z-
dc.date.available2018-02-07T07:02:28Z-
dc.date.issued2018-01-30en
dc.identifier.citationCui C, Hu W-J, Yan X, Addiego C, Gao W, et al. (2018) Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3. Nano Letters. Available: http://dx.doi.org/10.1021/acs.nanolett.7b04852.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.7b04852en
dc.identifier.urihttp://hdl.handle.net/10754/627063-
dc.description.abstractEnriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intra-layer ferroelectricity in two-dimensional (2D) van der Waals layered -In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically intercorrelated out-of-plane and in-plane polarization, where the reversal of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. Based on the in-plane switchable diode effect and the narrow bandgap (~1.3 eV) of ferroelectric In2Se3, a prototypical non-volatile memory device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.en
dc.description.sponsorshipL.J.L. thanks the support from King Abdullah University of Science and Technology (Saudi Arabia). The work at University of California - Irvine was supported by the Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Science and Engineering, under Grant under Grant No. DE-SC0014430, and the Irvine Materials Research Institute (IMRI). We would like to thank Dr. Toshi Aoki from IMRI for his help on S/TEM experiments.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttps://pubs.acs.org/doi/10.1021/acs.nanolett.7b04852en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.nanolett.7b04852.en
dc.subject2D materialsen
dc.subjectIn2Se3en
dc.subjectferroelectricen
dc.subjectsemiconductoren
dc.subjectswitchable diodeen
dc.titleIntercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentKAUST Catalysis Center (KCC)en
dc.identifier.journalNano Lettersen
dc.eprint.versionPost-printen
dc.contributor.institutionShenyang National Laboratory for Materials Science, Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), Shenyang 110016, China.en
dc.contributor.institutionDepartment of Chemical Engineering and Materials Science, University of California - Irvine, Irvine, California 92697, America.en
dc.contributor.institutionDepartment of Physics and Astronomy, University of California - Irvine, Irvine, California 92697, America.en
dc.contributor.institutionKey Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, Jiangsu 211816, China.en
dc.contributor.institutionICQD, Hefei National Laboratory for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, and Key Laboratory of Strongly-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China, Hefei, Anhui 230026, China.en
dc.contributor.institutionCorporate Research and Chief Technology Office, Taiwan Semiconductor Manufacturing Company, Hsinchu 30075, Taiwan.en
kaust.authorCui, Chaojieen
kaust.authorHu, Weijinen
kaust.authorLi, Pengen
kaust.authorZhang, Xixiangen
kaust.authorAlshareef, Husam N.en
kaust.authorWu, Taoen
kaust.authorLi, Lain-Jongen
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