Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions

Handle URI:
http://hdl.handle.net/10754/626986
Title:
Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions
Authors:
Zhang, Chendong ( 0000-0002-4960-7036 ) ; Li, Ming-yang; Tersoff, Jerry; Han, Yimo; Su, Yushan; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Muller, David A. ( 0000-0003-4129-0473 ) ; Shih, Chih-Kang
Abstract:
Monolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; KAUST Catalysis Center (KCC)
Citation:
Zhang C, Li M-Y, Tersoff J, Han Y, Su Y, et al. (2018) Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions. Nature Nanotechnology. Available: http://dx.doi.org/10.1038/s41565-017-0022-x.
Publisher:
Springer Nature
Journal:
Nature Nanotechnology
Issue Date:
12-Jan-2018
DOI:
10.1038/s41565-017-0022-x
Type:
Article
ISSN:
1748-3387; 1748-3395
Sponsors:
This research was supported with grants from the Welch Foundation (F-1672), the US National Science Foundation (NSF) (DMR-1306878, EFMA-1542747) and the Materials Research Science and Engineering Center (DMR-1720595). L.J.L. acknowledges support from KAUST (Saudi Arabia), MOST and TCECM, Academia Sinica (Taiwan) and AOARD FA23861510001 (USA). C.Z acknowledges support from the National Natural Science Foundation of China (Grant No. 11774268). Y.S.S acknowledges support from the Yan Jici Talent Students Program. This work made use of the electron microscopy facility of the Cornell Center for Materials Research with support from the NSF (DMR-1719875 and DMR-1429155).
Additional Links:
https://www.nature.com/articles/s41565-017-0022-x
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; KAUST Catalysis Center (KCC)

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Chendongen
dc.contributor.authorLi, Ming-yangen
dc.contributor.authorTersoff, Jerryen
dc.contributor.authorHan, Yimoen
dc.contributor.authorSu, Yushanen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorMuller, David A.en
dc.contributor.authorShih, Chih-Kangen
dc.date.accessioned2018-02-01T07:25:02Z-
dc.date.available2018-02-01T07:25:02Z-
dc.date.issued2018-01-12en
dc.identifier.citationZhang C, Li M-Y, Tersoff J, Han Y, Su Y, et al. (2018) Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions. Nature Nanotechnology. Available: http://dx.doi.org/10.1038/s41565-017-0022-x.en
dc.identifier.issn1748-3387en
dc.identifier.issn1748-3395en
dc.identifier.doi10.1038/s41565-017-0022-xen
dc.identifier.urihttp://hdl.handle.net/10754/626986-
dc.description.abstractMonolayer transition metal dichalcogenide heterojunctions, including vertical and lateral p–n junctions, have attracted considerable attention due to their potential applications in electronics and optoelectronics. Lattice-misfit strain in atomically abrupt lateral heterojunctions, such as WSe2–MoS2, offers a new band-engineering strategy for tailoring their electronic properties. However, this approach requires an understanding of the strain distribution and its effect on band alignment. Here, we study a WSe2–MoS2 lateral heterojunction using scanning tunnelling microscopy and image its moiré pattern to map the full two-dimensional strain tensor with high spatial resolution. Using scanning tunnelling spectroscopy, we measure both the strain and the band alignment of the WSe2–MoS2 lateral heterojunction. We find that the misfit strain induces type II to type I band alignment transformation. Scanning transmission electron microscopy reveals the dislocations at the interface that partially relieve the strain. Finally, we observe a distinctive electronic structure at the interface due to hetero-bonding.en
dc.description.sponsorshipThis research was supported with grants from the Welch Foundation (F-1672), the US National Science Foundation (NSF) (DMR-1306878, EFMA-1542747) and the Materials Research Science and Engineering Center (DMR-1720595). L.J.L. acknowledges support from KAUST (Saudi Arabia), MOST and TCECM, Academia Sinica (Taiwan) and AOARD FA23861510001 (USA). C.Z acknowledges support from the National Natural Science Foundation of China (Grant No. 11774268). Y.S.S acknowledges support from the Yan Jici Talent Students Program. This work made use of the electron microscopy facility of the Cornell Center for Materials Research with support from the NSF (DMR-1719875 and DMR-1429155).en
dc.publisherSpringer Natureen
dc.relation.urlhttps://www.nature.com/articles/s41565-017-0022-xen
dc.titleStrain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentKAUST Catalysis Center (KCC)en
dc.identifier.journalNature Nanotechnologyen
dc.contributor.institutionSchool of Physics and Technology, Wuhan University, Wuhan, Chinaen
dc.contributor.institutionDepartment of Physics, University of Texas at Austin, Austin, TX, USAen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, Taiwanen
dc.contributor.institutionIBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY, USAen
dc.contributor.institutionSchool of Applied and Engineering Physics, Cornell University, Ithaca, NY, USAen
dc.contributor.institutionSchool of the Gifted Young, University of Science and Technology of China, Hefei, Anhui, Chinaen
dc.contributor.institutionKavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USAen
kaust.authorLi, Ming-yangen
kaust.authorLi, Lain-Jongen
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