Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers

Handle URI:
http://hdl.handle.net/10754/626869
Title:
Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers
Authors:
Zhang, Qiang ( 0000-0001-8519-5158 ) ; Zhang, Junwei; Zhao, Yuelei; Wen, Yan; Li, Peng ( 0000-0001-8633-9045 ) ; Zhang, Senfu; He, Xin ( 0000-0001-7009-2826 ) ; Zhang, Junli; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
The effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12n/Fe36n)n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 - 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρ) increases by 6.4 times and the anomalous Hall resistivity (ρ) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program
Citation:
Zhang Q, Zhang J, Zhao Y, Wen Y, Li P, et al. (2018) Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers. AIP Advances 8: 055813. Available: http://dx.doi.org/10.1063/1.5006355.
Publisher:
AIP Publishing
Journal:
AIP Advances
KAUST Grant Number:
REP/1/2708-01; REP/1/2719-01
Issue Date:
26-Dec-2017
DOI:
10.1063/1.5006355
Type:
Article
ISSN:
2158-3226
Sponsors:
The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). QZ and PL acknowledge the financial support by KAUST sensor project (REP/1/2708-01). XH acknowledges the financial support by KAUST sensor project (REP/1/2719-01).
Additional Links:
http://aip.scitation.org/doi/10.1063/1.5006355
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Qiangen
dc.contributor.authorZhang, Junweien
dc.contributor.authorZhao, Yueleien
dc.contributor.authorWen, Yanen
dc.contributor.authorLi, Pengen
dc.contributor.authorZhang, Senfuen
dc.contributor.authorHe, Xinen
dc.contributor.authorZhang, Junlien
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2018-01-28T07:01:37Z-
dc.date.available2018-01-28T07:01:37Z-
dc.date.issued2017-12-26en
dc.identifier.citationZhang Q, Zhang J, Zhao Y, Wen Y, Li P, et al. (2018) Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers. AIP Advances 8: 055813. Available: http://dx.doi.org/10.1063/1.5006355.en
dc.identifier.issn2158-3226en
dc.identifier.doi10.1063/1.5006355en
dc.identifier.urihttp://hdl.handle.net/10754/626869-
dc.description.abstractThe effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12n/Fe36n)n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 - 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρ) increases by 6.4 times and the anomalous Hall resistivity (ρ) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.en
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). QZ and PL acknowledge the financial support by KAUST sensor project (REP/1/2708-01). XH acknowledges the financial support by KAUST sensor project (REP/1/2719-01).en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.5006355en
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5006355en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectHallen
dc.subjectMagnetic orderingen
dc.subjectCrystal structureen
dc.subjectScatteringen
dc.subjectThin filmsen
dc.titleInterfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalAIP Advancesen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorZhang, Qiangen
kaust.authorZhang, Junweien
kaust.authorZhao, Yueleien
kaust.authorWen, Yanen
kaust.authorLi, Pengen
kaust.authorZhang, Senfuen
kaust.authorHe, Xinen
kaust.authorZhang, Junlien
kaust.authorZhang, Xixiangen
kaust.grant.numberREP/1/2708-01en
kaust.grant.numberREP/1/2719-01en
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