Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells

Handle URI:
http://hdl.handle.net/10754/626865
Title:
Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells
Authors:
Bahabry, Rabab R; Hanna, Amir N; Kutbee, Arwa T; Gumus, Abdurrahman; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
The Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Citation:
Bahabry RR, Hanna AN, Kutbee AT, Gumus A, Hussain MM (2018) Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells. Energy Technology. Available: http://dx.doi.org/10.1002/ente.201700790.
Publisher:
Wiley-Blackwell
Journal:
Energy Technology
KAUST Grant Number:
GEN/1/4014-01-01
Issue Date:
11-Jan-2018
DOI:
10.1002/ente.201700790
Type:
Article
ISSN:
2194-4288
Sponsors:
This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Technology Transfer Office under Award No. GEN/1/4014-01-01.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/ente.201700790/abstract
Appears in Collections:
Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorBahabry, Rabab Ren
dc.contributor.authorHanna, Amir Nen
dc.contributor.authorKutbee, Arwa Ten
dc.contributor.authorGumus, Abdurrahmanen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2018-01-28T07:01:37Z-
dc.date.available2018-01-28T07:01:37Z-
dc.date.issued2018-01-11en
dc.identifier.citationBahabry RR, Hanna AN, Kutbee AT, Gumus A, Hussain MM (2018) Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells. Energy Technology. Available: http://dx.doi.org/10.1002/ente.201700790.en
dc.identifier.issn2194-4288en
dc.identifier.doi10.1002/ente.201700790en
dc.identifier.urihttp://hdl.handle.net/10754/626865-
dc.description.abstractThe Silicon-based solar cell is one of the most important enablers toward high efficiency and low-cost clean energy resource. Metallization of silicon-based solar cells typically utilizes screen printed silver-Aluminium (Ag-Al) which affects the optimal electrical performance. To date, metal silicide-based ohmic contacts are occasionally used as an alternative candidate only to the front contact grid lines in crystalline silicon (c-Si) based solar cells. In this paper, we investigate the electrical characteristics of nickel mono-silicide (NiSi)/Cu-Al ohmic contact on the rear side of c-Si solar cells. We observe a significant enhancement in the fill factor of around 6.5% for NiSi/Cu-Al rear contacts leading to increasing the efficiency by 1.2% compared to Ag-Al. This is attributed to the improvement of the parasitic resistance in which the series resistance decreased by 0.737 Ω.cm². Further, we complement experimental observation with a simulation of different contact resistance values, which manifests NiSi/Cu-Al rear contact as a promising low-cost metallization for c-Si solar cells with enhanced efficiency.en
dc.description.sponsorshipThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) Technology Transfer Office under Award No. GEN/1/4014-01-01.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/ente.201700790/abstracten
dc.rightsThis is the peer reviewed version of the following article: Impact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cells, which has been published in final form at http://doi.org/10.1002/ente.201700790. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.en
dc.titleImpact of Nickel silicide Rear Metallization on Series Resistance of Crystalline Silicon Solar Cellsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalEnergy Technologyen
dc.eprint.versionPost-printen
dc.contributor.institutionSAUDI ARABIAen
kaust.authorHussain, Muhammad Mustafaen
kaust.grant.numberGEN/1/4014-01-01en
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