A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity

Handle URI:
http://hdl.handle.net/10754/626843
Title:
A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity
Authors:
Almansouri, Abdullah Saud Mohammed ( 0000-0002-6814-7063 ) ; Ouda, Mahmoud H.; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
This paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Citation:
Almansouri AS, Ouda MH, Salama KN (2018) A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity. IEEE Transactions on Microwave Theory and Techniques: 1–7. Available: http://dx.doi.org/10.1109/TMTT.2017.2785251.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Microwave Theory and Techniques
Issue Date:
9-Jan-2018
DOI:
10.1109/TMTT.2017.2785251
Type:
Article
ISSN:
0018-9480; 1557-9670
Additional Links:
http://ieeexplore.ieee.org/document/8252773/
Appears in Collections:
Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAlmansouri, Abdullah Saud Mohammeden
dc.contributor.authorOuda, Mahmoud H.en
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2018-01-28T07:01:35Z-
dc.date.available2018-01-28T07:01:35Z-
dc.date.issued2018-01-09en
dc.identifier.citationAlmansouri AS, Ouda MH, Salama KN (2018) A CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivity. IEEE Transactions on Microwave Theory and Techniques: 1–7. Available: http://dx.doi.org/10.1109/TMTT.2017.2785251.en
dc.identifier.issn0018-9480en
dc.identifier.issn1557-9670en
dc.identifier.doi10.1109/TMTT.2017.2785251en
dc.identifier.urihttp://hdl.handle.net/10754/626843-
dc.description.abstractThis paper proposes an RF-to-dc power converter for ambient wireless powering that is efficient, highly sensitive, and less dependent on the load resistance with an extended dynamic range. The proposed rectifier utilizes a variable biasing technique to control the conduction of the rectifying transistors selectively, hence minimizing the leakage current; unlike the prior work that has a fixed feedback resistors, which limits the efficient operation to a relatively high RF power and causes a drop in the peak power conversion efficiency (PCE). The proposed design is fabricated using a 0.18-μm standard CMOS technology and occupies an area of 8800 μm². The measurement results show an 86% PCE and -19.2-dBm (12 μW) sensitivity when operating at the medical band 433 MHz with a 100-kΩ load. Furthermore, the PCE is 66%, and the sensitivity is -18.2 dBm (15.1 μW) when operating at UHF 900 MHz with a 100-kΩ load.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/8252773/en
dc.rights(c) 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Released under the IEEE Open Access Publishing Agreement.en
dc.rights.urihttp://www.ieee.org/publications_standards/publications/rights/oa_author_choices.htmlen
dc.subjectMicrowave theory and techniquesen
dc.subjectRadio frequencyen
dc.subjectResistorsen
dc.subjectSensitivityen
dc.subjectThreshold voltageen
dc.subjectWireless communicationen
dc.subjectWireless sensor networksen
dc.titleA CMOS RF-to-DC Power Converter With 86% Efficiency and -19.2-dBm Sensitivityen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalIEEE Transactions on Microwave Theory and Techniquesen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionUniversity of Jeddah, Dhahban 23881, Saudi Arabiaen
dc.contributor.institutionCommunications and Signal Processing Group (CSP), Imperial College London, London SW7 2AZ, U.K.en
kaust.authorAlmansouri, Abdullah Saud Mohammeden
kaust.authorSalama, Khaled N.en
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