Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

Handle URI:
http://hdl.handle.net/10754/626806
Title:
Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects
Authors:
Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim
Abstract:
A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.
Citation:
Shen S, Williamson M, Cao G, Zhou J, Goodenough J, et al. (2017) Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects. Journal of Applied Physics 122: 245108. Available: http://dx.doi.org/10.1063/1.5008650.
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
KAUST Grant Number:
OSR-2015-CRG4-2626
Issue Date:
29-Dec-2017
DOI:
10.1063/1.5008650
Type:
Article
ISSN:
0021-8979; 1089-7550
Sponsors:
This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by NSF Grant Nos. DMR-1712101 and DMR-1122603, and by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-CRG4-2626.
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Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Shidaen
dc.contributor.authorWilliamson, Morganen
dc.contributor.authorCao, Gangen
dc.contributor.authorZhou, Jianshien
dc.contributor.authorGoodenough, Johnen
dc.contributor.authorTsoi, Maximen
dc.date.accessioned2018-01-15T06:49:45Z-
dc.date.available2018-01-15T06:49:45Z-
dc.date.issued2017-12-29en
dc.identifier.citationShen S, Williamson M, Cao G, Zhou J, Goodenough J, et al. (2017) Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects. Journal of Applied Physics 122: 245108. Available: http://dx.doi.org/10.1063/1.5008650.en
dc.identifier.issn0021-8979en
dc.identifier.issn1089-7550en
dc.identifier.doi10.1063/1.5008650en
dc.identifier.urihttp://hdl.handle.net/10754/626806-
dc.description.abstractA non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.en
dc.description.sponsorshipThis work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by NSF Grant Nos. DMR-1712101 and DMR-1122603, and by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-CRG4-2626.en
dc.publisherAIP Publishingen
dc.subjectActivation energiesen
dc.subjectElectrical propertiesen
dc.subjectMetrologyen
dc.subjectInsulatorsen
dc.subjectElectrical conductivityen
dc.titleNon-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effectsen
dc.typeArticleen
dc.identifier.journalJournal of Applied Physicsen
dc.contributor.institutionTexas Materials Institute, University of Texas at Austin, Austin, Texas 78712, USAen
dc.contributor.institutionPhysics Department, University of Texas at Austin, Austin, Texas 78712, USAen
dc.contributor.institutionDepartment of Physics, University of Colorado-Boulder, Boulder, Colorado 80309, USAen
kaust.grant.numberOSR-2015-CRG4-2626en
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