High-Performance Single-Crystalline Perovskite Thin-Film Photodetector

Handle URI:
http://hdl.handle.net/10754/626803
Title:
High-Performance Single-Crystalline Perovskite Thin-Film Photodetector
Authors:
Yang, Zhenqian; Deng, Yuhao; Zhang, Xiaowei; Wang, Suo; Chen, Huazhou; Yang, Sui; Khurgin, Jacob; Fang, Nicholas X.; Zhang, Xiang; Ma, Renmin
Abstract:
The best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.
Citation:
Yang Z, Deng Y, Zhang X, Wang S, Chen H, et al. (2018) High-Performance Single-Crystalline Perovskite Thin-Film Photodetector. Advanced Materials: 1704333. Available: http://dx.doi.org/10.1002/adma.201704333.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
KAUST Grant Number:
OSR-2016-CRG5-2950-03
Issue Date:
10-Jan-2018
DOI:
10.1002/adma.201704333
Type:
Article
ISSN:
0935-9648
Sponsors:
Z.Y., Y.D., and Dr. X.Z. contributed equally to this work. This work was supported by the National Natural Science Foundation of China (Grant Nos. 11574012, 11774014, and 61521004) and the “Youth 1000 Talent Plan.” The research is partially supported by Office of Naval Research (ONR) Multidisciplinary University Research Initiative (MURI) program under Grant No. N00014-17-1-2588 and the King Abdullah University of Science and Technology Office of Sponsored Research (OSR) (Award OSR-2016-CRG5-2950-03).
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Full metadata record

DC FieldValue Language
dc.contributor.authorYang, Zhenqianen
dc.contributor.authorDeng, Yuhaoen
dc.contributor.authorZhang, Xiaoweien
dc.contributor.authorWang, Suoen
dc.contributor.authorChen, Huazhouen
dc.contributor.authorYang, Suien
dc.contributor.authorKhurgin, Jacoben
dc.contributor.authorFang, Nicholas X.en
dc.contributor.authorZhang, Xiangen
dc.contributor.authorMa, Renminen
dc.date.accessioned2018-01-15T06:49:45Z-
dc.date.available2018-01-15T06:49:45Z-
dc.date.issued2018-01-10en
dc.identifier.citationYang Z, Deng Y, Zhang X, Wang S, Chen H, et al. (2018) High-Performance Single-Crystalline Perovskite Thin-Film Photodetector. Advanced Materials: 1704333. Available: http://dx.doi.org/10.1002/adma.201704333.en
dc.identifier.issn0935-9648en
dc.identifier.doi10.1002/adma.201704333en
dc.identifier.urihttp://hdl.handle.net/10754/626803-
dc.description.abstractThe best performing modern optoelectronic devices rely on single-crystalline thin-film (SC-TF) semiconductors grown epitaxially. The emerging halide perovskites, which can be synthesized via low-cost solution-based methods, have achieved substantial success in various optoelectronic devices including solar cells, lasers, light-emitting diodes, and photodetectors. However, to date, the performance of these perovskite devices based on polycrystalline thin-film active layers lags behind the epitaxially grown semiconductor devices. Here, a photodetector based on SC-TF perovskite active layer is reported with a record performance of a 50 million gain, 70 GHz gain-bandwidth product, and a 100-photon level detection limit at 180 Hz modulation bandwidth, which as far as we know are the highest values among all the reported perovskite photodetectors. The superior performance of the device originates from replacing polycrystalline thin film by a thickness-optimized SC-TF with much higher mobility and longer recombination time. The results indicate that high-performance perovskite devices based on SC-TF may become competitive in modern optoelectronics.en
dc.description.sponsorshipZ.Y., Y.D., and Dr. X.Z. contributed equally to this work. This work was supported by the National Natural Science Foundation of China (Grant Nos. 11574012, 11774014, and 61521004) and the “Youth 1000 Talent Plan.” The research is partially supported by Office of Naval Research (ONR) Multidisciplinary University Research Initiative (MURI) program under Grant No. N00014-17-1-2588 and the King Abdullah University of Science and Technology Office of Sponsored Research (OSR) (Award OSR-2016-CRG5-2950-03).en
dc.publisherWiley-Blackwellen
dc.subjectgainen
dc.subjecthalide perovskiteen
dc.subjectphotodetectorsen
dc.subjectsingle-crystalline thin filmsen
dc.titleHigh-Performance Single-Crystalline Perovskite Thin-Film Photodetectoren
dc.typeArticleen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionState Key Lab for Mesoscopic Physics and School of Physics; Peking University; Beijing 100871 Chinaen
dc.contributor.institutionDepartment of Mechanical Engineering; University of California; Berkeley CA 94720 USAen
dc.contributor.institutionDepartment of Electrical and Computer Engineering; Johns Hopkins University; Baltimore MD 21218 USAen
dc.contributor.institutionDepartment of Mechanical Engineering; Massachusetts Institute of Technology; Cambridge MA 02139 USAen
kaust.grant.numberOSR-2016-CRG5-2950-03en
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