Quantum Dots in Two-Dimensional Perovskite Matrices for Efficient Near-Infrared Light Emission

Handle URI:
http://hdl.handle.net/10754/626724
Title:
Quantum Dots in Two-Dimensional Perovskite Matrices for Efficient Near-Infrared Light Emission
Authors:
Yang, Zhenyu ( 0000-0002-6403-8679 ) ; Voznyy, Oleksandr ( 0000-0002-8656-5074 ) ; Walters, Grant; Fan, James Z.; Liu, Min; Kinge, Sachin; Hoogland, Sjoerd; Sargent, Edward H.
Abstract:
Quantum-dot-in-perovskite solids are excellent candidates for infrared light-emitting applications. The first generation of dot-in-perovskite light-emitting diodes (LEDs) has shown bright infrared electroluminescence with tunable emission wavelength; however, their performance has been limited by degradation of the active layer at practical operating voltages. This arises from the instability of the three-dimensional (3D) organolead halide perovskite matrix. Herein we report the first dot-in-perovskite solids that employ two-dimensional (2D) perovskites as the matrix. 2D perovskite passivation is achieved via an in situ alkylammonium/alkylamine substitution carried out during the quantum dot (QD) ligand exchange process. This single-step film preparation process enables deposition of the QD/perovskite active layers with thicknesses of 40 nm, over seven times thinner than the first-generation dot-in-perovskite thin films that relied on a multistep synthesis. The dot-in-perovskite film roughness improved from 31 nm for the first-generation films to 3 nm for films as a result of this new approach. The best devices exhibit external quantum efficiency peaks exceeding 2% and radiances of ∼1 W sr–1 m–2, with an improved breakdown voltage up to 7.5 V. Compared to first-generation dot-in-perovskites, this new process reduces materials consumptions 10-fold and represents a promising step toward manufacturable devices.
Citation:
Yang Z, Voznyy O, Walters G, Fan JZ, Liu M, et al. (2017) Quantum Dots in Two-Dimensional Perovskite Matrices for Efficient Near-Infrared Light Emission. ACS Photonics 4: 830–836. Available: http://dx.doi.org/10.1021/acsphotonics.6b00865.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Photonics
KAUST Grant Number:
KUS-11-009-21
Issue Date:
13-Mar-2017
DOI:
10.1021/acsphotonics.6b00865
Type:
Article
ISSN:
2330-4022; 2330-4022
Sponsors:
This publication is based in part on work supported by Award KUS-11-009-21, from King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund - Research Excellence Program, and by the Natural Sciences and Engineering Research Council of Canada (NSERC). E. Yassitepe and P. Kanjanaboos are thanked for the assistance of HRTEM, STEM, and AFM measurements. The authors thank L. Gao, R. Wolowiec, D. Kopilovic, and E. Palmiano for their help and useful discussions.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorYang, Zhenyuen
dc.contributor.authorVoznyy, Oleksandren
dc.contributor.authorWalters, Granten
dc.contributor.authorFan, James Z.en
dc.contributor.authorLiu, Minen
dc.contributor.authorKinge, Sachinen
dc.contributor.authorHoogland, Sjoerden
dc.contributor.authorSargent, Edward H.en
dc.date.accessioned2018-01-04T07:51:42Z-
dc.date.available2018-01-04T07:51:42Z-
dc.date.issued2017-03-13en
dc.identifier.citationYang Z, Voznyy O, Walters G, Fan JZ, Liu M, et al. (2017) Quantum Dots in Two-Dimensional Perovskite Matrices for Efficient Near-Infrared Light Emission. ACS Photonics 4: 830–836. Available: http://dx.doi.org/10.1021/acsphotonics.6b00865.en
dc.identifier.issn2330-4022en
dc.identifier.issn2330-4022en
dc.identifier.doi10.1021/acsphotonics.6b00865en
dc.identifier.urihttp://hdl.handle.net/10754/626724-
dc.description.abstractQuantum-dot-in-perovskite solids are excellent candidates for infrared light-emitting applications. The first generation of dot-in-perovskite light-emitting diodes (LEDs) has shown bright infrared electroluminescence with tunable emission wavelength; however, their performance has been limited by degradation of the active layer at practical operating voltages. This arises from the instability of the three-dimensional (3D) organolead halide perovskite matrix. Herein we report the first dot-in-perovskite solids that employ two-dimensional (2D) perovskites as the matrix. 2D perovskite passivation is achieved via an in situ alkylammonium/alkylamine substitution carried out during the quantum dot (QD) ligand exchange process. This single-step film preparation process enables deposition of the QD/perovskite active layers with thicknesses of 40 nm, over seven times thinner than the first-generation dot-in-perovskite thin films that relied on a multistep synthesis. The dot-in-perovskite film roughness improved from 31 nm for the first-generation films to 3 nm for films as a result of this new approach. The best devices exhibit external quantum efficiency peaks exceeding 2% and radiances of ∼1 W sr–1 m–2, with an improved breakdown voltage up to 7.5 V. Compared to first-generation dot-in-perovskites, this new process reduces materials consumptions 10-fold and represents a promising step toward manufacturable devices.en
dc.description.sponsorshipThis publication is based in part on work supported by Award KUS-11-009-21, from King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund - Research Excellence Program, and by the Natural Sciences and Engineering Research Council of Canada (NSERC). E. Yassitepe and P. Kanjanaboos are thanked for the assistance of HRTEM, STEM, and AFM measurements. The authors thank L. Gao, R. Wolowiec, D. Kopilovic, and E. Palmiano for their help and useful discussions.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectinfrared light emissionen
dc.subjectlight-emitting diodesen
dc.subjectperovskitesen
dc.subjectquantum dotsen
dc.titleQuantum Dots in Two-Dimensional Perovskite Matrices for Efficient Near-Infrared Light Emissionen
dc.typeArticleen
dc.identifier.journalACS Photonicsen
dc.contributor.institutionThe Edward S. Rogers Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario M5S 3G4, Canadaen
dc.contributor.institutionAdvanced Technology Materials and Research, Research and Development, Toyota Technical Centre, Hoge Wei 33, B-1930, Zaventem, Belgiumen
kaust.grant.numberKUS-11-009-21en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.