Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

Handle URI:
http://hdl.handle.net/10754/626699
Title:
Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity
Authors:
Wan, Yi; Xiao, Jun; Li, Jingzhen; Fang, Xin; Zhang, Kun; Fu, Lei; Li, Pan; Song, Zhigang; Zhang, Hui; Wang, Yilun; Zhao, Mervin; Lu, Jing; Tang, Ning; Ran, Guangzhao; Zhang, Xiang; Ye, Yu ( 0000-0001-6046-063X ) ; Dai, Lun
Abstract:
Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.
Citation:
Wan Y, Xiao J, Li J, Fang X, Zhang K, et al. (2017) Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity. Advanced Materials: 1703888. Available: http://dx.doi.org/10.1002/adma.201703888.
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
KAUST Grant Number:
OSR-2016-CRG5-2996
Issue Date:
19-Dec-2017
DOI:
10.1002/adma.201703888
Type:
Article
ISSN:
0935-9648
Sponsors:
This work was supported by the National Key R&D Program of China (Grant No. 2017YFA0206301), the National Basic Research Program of China (Grant No. 2013CB921901), the National Natural Science Foundation of China (Grant Nos. 61521004, 11474007, and 11674005), the King Abdulah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2016-CRG5-2996, the National Science Foundation (NSF) under grant 1753380, and the “Youth 1000 Talent Plan” Fund. Y.Y. thanks Ting Cao from University of California, Berkeley, for help discussions.
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Full metadata record

DC FieldValue Language
dc.contributor.authorWan, Yien
dc.contributor.authorXiao, Junen
dc.contributor.authorLi, Jingzhenen
dc.contributor.authorFang, Xinen
dc.contributor.authorZhang, Kunen
dc.contributor.authorFu, Leien
dc.contributor.authorLi, Panen
dc.contributor.authorSong, Zhigangen
dc.contributor.authorZhang, Huien
dc.contributor.authorWang, Yilunen
dc.contributor.authorZhao, Mervinen
dc.contributor.authorLu, Jingen
dc.contributor.authorTang, Ningen
dc.contributor.authorRan, Guangzhaoen
dc.contributor.authorZhang, Xiangen
dc.contributor.authorYe, Yuen
dc.contributor.authorDai, Lunen
dc.date.accessioned2018-01-04T07:51:40Z-
dc.date.available2018-01-04T07:51:40Z-
dc.date.issued2017-12-19en
dc.identifier.citationWan Y, Xiao J, Li J, Fang X, Zhang K, et al. (2017) Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity. Advanced Materials: 1703888. Available: http://dx.doi.org/10.1002/adma.201703888.en
dc.identifier.issn0935-9648en
dc.identifier.doi10.1002/adma.201703888en
dc.identifier.urihttp://hdl.handle.net/10754/626699-
dc.description.abstractEngineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications.en
dc.description.sponsorshipThis work was supported by the National Key R&D Program of China (Grant No. 2017YFA0206301), the National Basic Research Program of China (Grant No. 2013CB921901), the National Natural Science Foundation of China (Grant Nos. 61521004, 11474007, and 11674005), the King Abdulah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2016-CRG5-2996, the National Science Foundation (NSF) under grant 1753380, and the “Youth 1000 Talent Plan” Fund. Y.Y. thanks Ting Cao from University of California, Berkeley, for help discussions.en
dc.publisherWiley-Blackwellen
dc.titleEpitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicityen
dc.typeArticleen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionState Key Lab for Mesoscopic Physics and School of Physics; Peking University; Beijing 100871 P. R. Chinaen
dc.contributor.institutionNSF Nanoscale Science and Engineering Center; University of California; Berkeley CA 94720 USAen
dc.contributor.institutionCollaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. Chinaen
dc.contributor.institutionMaterials Sciences Division; Lawrence Berkeley National Laboratory; Berkeley CA 94720 USAen
kaust.grant.numberOSR-2016-CRG5-2996en
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