Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

Handle URI:
http://hdl.handle.net/10754/626655
Title:
Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions
Authors:
Guan, Xinwei; Hu, Weijin ( 0000-0001-5862-1481 ) ; Haque, Mohammed; Wei, Nini; Liu, Zhixiong; Chen, Aitian; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite-based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high-quality capacitor structure made of an MAPbBr3 (CH3NH3PbBr3) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 103, endurance over 103 cycles, and a retention time of 104 s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr3/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI3 consistently exhibit filament-type switching behavior. This work elucidates the important role of processing-dependent defects in the charge transport of hybrid perovskites and provides insights on the ion-redistribution-based RS in perovskite memory devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Imaging and Characterization Core Lab
Citation:
Guan X, Hu W, Haque MA, Wei N, Liu Z, et al. (2017) Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions. Advanced Functional Materials: 1704665. Available: http://dx.doi.org/10.1002/adfm.201704665.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
23-Nov-2017
DOI:
10.1002/adfm.201704665
Type:
Article
ISSN:
1616-301X
Sponsors:
This work was supported by the King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201704665/abstract
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGuan, Xinweien
dc.contributor.authorHu, Weijinen
dc.contributor.authorHaque, Mohammeden
dc.contributor.authorWei, Ninien
dc.contributor.authorLiu, Zhixiongen
dc.contributor.authorChen, Aitianen
dc.contributor.authorWu, Taoen
dc.date.accessioned2018-01-01T12:19:05Z-
dc.date.available2018-01-01T12:19:05Z-
dc.date.issued2017-11-23en
dc.identifier.citationGuan X, Hu W, Haque MA, Wei N, Liu Z, et al. (2017) Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions. Advanced Functional Materials: 1704665. Available: http://dx.doi.org/10.1002/adfm.201704665.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201704665en
dc.identifier.urihttp://hdl.handle.net/10754/626655-
dc.description.abstractHybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite-based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high-quality capacitor structure made of an MAPbBr3 (CH3NH3PbBr3) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 103, endurance over 103 cycles, and a retention time of 104 s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr3/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI3 consistently exhibit filament-type switching behavior. This work elucidates the important role of processing-dependent defects in the charge transport of hybrid perovskites and provides insights on the ion-redistribution-based RS in perovskite memory devices.en
dc.description.sponsorshipThis work was supported by the King Abdullah University of Science and Technology (KAUST).en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201704665/abstracten
dc.subjectHybrid perovskitesen
dc.subjectInterfaceen
dc.subjectResistive switchingen
dc.subjectSchottky junctionen
dc.subjectVacancy migrationen
dc.titleLight-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalAdvanced Functional Materialsen
kaust.authorGuan, Xinweien
kaust.authorHu, Weijinen
kaust.authorHaque, Mohammeden
kaust.authorWei, Ninien
kaust.authorLiu, Zhixiongen
kaust.authorChen, Aitianen
kaust.authorWu, Taoen
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