Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer

Handle URI:
http://hdl.handle.net/10754/626654
Title:
Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer
Authors:
Pak, Yusin; Park, Woojin; Mitra, Somak; Devi, Assa Aravindh Sasikala ( 0000-0001-9360-3457 ) ; Loganathan, Kalaivanan ( 0000-0002-8343-1935 ) ; Kumaresan, Yogeenth; Kim, Yonghun; Cho, Byungjin; Jung, Gun-Young; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
2D molybdenum disulfide (MoS2) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2/SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Pak Y, Park W, Mitra S, Sasikala Devi AA, Loganathan K, et al. (2017) Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer. Small: 1703176. Available: http://dx.doi.org/10.1002/smll.201703176.
Publisher:
Wiley-Blackwell
Journal:
Small
Issue Date:
5-Dec-2017
DOI:
10.1002/smll.201703176
Type:
Article
ISSN:
1613-6810
Sponsors:
Authors thank KAUST for the financial support.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/smll.201703176/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorPak, Yusinen
dc.contributor.authorPark, Woojinen
dc.contributor.authorMitra, Somaken
dc.contributor.authorDevi, Assa Aravindh Sasikalaen
dc.contributor.authorLoganathan, Kalaivananen
dc.contributor.authorKumaresan, Yogeenthen
dc.contributor.authorKim, Yonghunen
dc.contributor.authorCho, Byungjinen
dc.contributor.authorJung, Gun-Youngen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2018-01-01T12:19:05Z-
dc.date.available2018-01-01T12:19:05Z-
dc.date.issued2017-12-05en
dc.identifier.citationPak Y, Park W, Mitra S, Sasikala Devi AA, Loganathan K, et al. (2017) Enhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayer. Small: 1703176. Available: http://dx.doi.org/10.1002/smll.201703176.en
dc.identifier.issn1613-6810en
dc.identifier.doi10.1002/smll.201703176en
dc.identifier.urihttp://hdl.handle.net/10754/626654-
dc.description.abstract2D molybdenum disulfide (MoS2) possesses excellent optoelectronic properties that make it a promising candidate for use in high-performance photodetectors. Yet, to meet the growing demand for practical and reliable MoS2 photodetectors, the critical issue of defect introduction to the interface between the exfoliated MoS2 and the electrode metal during fabrication must be addressed, because defects deteriorate the device performance. To achieve this objective, the use of an atomic layer-deposited TiO2 interlayer (between exfoliated MoS2 and electrode) is reported in this work, for the first time, to enhance the performance of MoS2 photodetectors. The TiO2 interlayer is inserted through 20 atomic layer deposition cycles before depositing the electrode metal on MoS2/SiO2 substrate, leading to significantly enhanced photoresponsivity and response speed. These results pave the way for practical applications and provide a novel direction for optimizing the interlayer material.en
dc.description.sponsorshipAuthors thank KAUST for the financial support.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/smll.201703176/fullen
dc.subjectAtomic layer depositionen
dc.subjectInterlayeren
dc.subjectMolybdenum disulfideen
dc.subjectPhotodetectorsen
dc.subjectTitanium dioxideen
dc.titleEnhanced Performance of MoS2 Photodetectors by Inserting an ALD-Processed TiO2 Interlayeren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalSmallen
dc.contributor.institutionSchool of Materials Science and Engineering; Gwangju Institute of Science and Technology (GIST); 261 Cheomdan-gwagiro Buk-gu Gwangju 500-712 Republic of Koreaen
dc.contributor.institutionDepartment of Advanced Functional Thin Films; Surface Technology Division; Korea Institute of Materials Science (KIMS); 797 Changwondaero Sungsan-gu, Changwon Gyeongnam 51508 Republic of Koreaen
dc.contributor.institutionDepartment of Advanced Material Engineering; Chungbuk National University; 1 Chungdae-ro Seowon-gu, Cheongju Chungbuk 28644 Republic of Koreaen
kaust.authorPak, Yusinen
kaust.authorPark, Woojinen
kaust.authorMitra, Somaken
kaust.authorDevi, Assa Aravindh Sasikalaen
kaust.authorLoganathan, Kalaivananen
kaust.authorHussain, Muhammad Mustafaen
kaust.authorRoqan, Iman S.en
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