Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors

Handle URI:
http://hdl.handle.net/10754/626649
Title:
Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors
Authors:
Tang, Hao-Ling; Chiu, Ming-Hui ( 0000-0003-3753-8149 ) ; Tseng, Chien-Chih ( 0000-0003-0676-5664 ) ; Yang, Shih-Hsien; Hou, Kuan-Jhih; Wei, Sung-Yen; Huang, Jing-Kai; Lin, Yen-Fu; Lien, Chen-Hsin; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Two-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Tang H-L, Chiu M-H, Tseng C-C, Yang S-H, Hou K-J, et al. (2017) Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors. ACS Nano 11: 12817–12823. Available: http://dx.doi.org/10.1021/acsnano.7b07755.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
29-Nov-2017
DOI:
10.1021/acsnano.7b07755
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
This research was funded by King Abdullah University of Science & Technology (Saudi Arabia). We would also like to acknowledge the support from Nanofabrication Core Lab in KAUST.
Additional Links:
http://pubs.acs.org/doi/10.1021/acsnano.7b07755
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTang, Hao-Lingen
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorTseng, Chien-Chihen
dc.contributor.authorYang, Shih-Hsienen
dc.contributor.authorHou, Kuan-Jhihen
dc.contributor.authorWei, Sung-Yenen
dc.contributor.authorHuang, Jing-Kaien
dc.contributor.authorLin, Yen-Fuen
dc.contributor.authorLien, Chen-Hsinen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2018-01-01T12:19:05Z-
dc.date.available2018-01-01T12:19:05Z-
dc.date.issued2017-11-29en
dc.identifier.citationTang H-L, Chiu M-H, Tseng C-C, Yang S-H, Hou K-J, et al. (2017) Multilayer Graphene–WSe2 Heterostructures for WSe2 Transistors. ACS Nano 11: 12817–12823. Available: http://dx.doi.org/10.1021/acsnano.7b07755.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/acsnano.7b07755en
dc.identifier.urihttp://hdl.handle.net/10754/626649-
dc.description.abstractTwo-dimensional (2D) materials are drawing growing attention for next-generation electronics and optoelectronics owing to its atomic thickness and unique physical properties. One of the challenges posed by 2D materials is the large source/drain (S/D) series resistance due to their thinness, which may be resolved by thickening the source and drain regions. Recently explored lateral graphene–MoS21−3 and graphene–WS21,4 heterostructures shed light on resolving the mentioned issues owing to their superior ohmic contact behaviors. However, recently reported field-effect transistors (FETs) based on graphene–TMD heterostructures have only shown n-type characteristics. The lack of p-type transistor limits their applications in complementary metal-oxide semiconductor electronics. In this work, we demonstrate p-type FETs based on graphene–WSe2 lateral heterojunctions grown with the scalable CVD technique. Few-layer WSe2 is overlapped with the multilayer graphene (MLG) at MLG–WSe2 junctions such that the contact resistance is reduced. Importantly, the few-layer WSe2 only forms at the junction region while the channel is still maintained as a WSe2 monolayer for transistor operation. Furthermore, by imposing doping to graphene S/D, 2 orders of magnitude enhancement in Ion/Ioff ratio to ∼108 and the unipolar p-type characteristics are obtained regardless of the work function of the metal in ambient air condition. The MLG is proposed to serve as a 2D version of emerging raised source/drain approach in electronics.en
dc.description.sponsorshipThis research was funded by King Abdullah University of Science & Technology (Saudi Arabia). We would also like to acknowledge the support from Nanofabrication Core Lab in KAUST.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/10.1021/acsnano.7b07755en
dc.subjectcontacten
dc.subjectgrapheneen
dc.subjectheterostructureen
dc.subjecttransistoren
dc.subjecttransition metal dichalcogenidesen
dc.subjectWSe2en
dc.titleMultilayer Graphene–WSe2 Heterostructures for WSe2 Transistorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.contributor.institutionInstitute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwanen
dc.contributor.institutionDepartment of Physics, National Chung Hsing University, Taichung 402, Taiwanen
dc.contributor.institutionSulfurScience Technology Co. Ltd, Taipei 106, Taiwanen
kaust.authorTang, Hao-Lingen
kaust.authorChiu, Ming-Huien
kaust.authorTseng, Chien-Chihen
kaust.authorLi, Lain-Jongen
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