Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells

Handle URI:
http://hdl.handle.net/10754/626630
Title:
Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells
Authors:
Ali, Haider; Yang, Xinbo; Weber, Klaus; Schoenfeld, Winston V.; Davis, Kristopher O.
Abstract:
In this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.
KAUST Department:
KAUST Solar Center (KSC)
Citation:
Ali H, Yang X, Weber K, Schoenfeld WV, Davis KO (2017) Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells. Microscopy and Microanalysis 23: 900–904. Available: http://dx.doi.org/10.1017/S1431927617012417.
Publisher:
Cambridge University Press (CUP)
Journal:
Microscopy and Microanalysis
Issue Date:
15-Aug-2017
DOI:
10.1017/S1431927617012417
Type:
Article
ISSN:
1431-9276; 1435-8115
Sponsors:
The authors would like to thank Eric Schneller for assistance with analysis of the quantum efficiency and reflectance data. The authors acknowledge financial support from the Australian Renewable Energy Agency (ARENA) under the Postdoctoral Fellowship. The authors would also like to acknowledge support for this work by the US Department of Energy, Office of Energy Efficiency and Renewable Energy, in the Solar Energy Technologies Program, under Award Number DE-EE0004947. Finally, the Materials Characterization Facility at University of Central Florida (UCF) is acknowledged for usage of its facilities.
Appears in Collections:
Articles; KAUST Solar Center (KSC)

Full metadata record

DC FieldValue Language
dc.contributor.authorAli, Haideren
dc.contributor.authorYang, Xinboen
dc.contributor.authorWeber, Klausen
dc.contributor.authorSchoenfeld, Winston V.en
dc.contributor.authorDavis, Kristopher O.en
dc.date.accessioned2018-01-01T12:19:04Z-
dc.date.available2018-01-01T12:19:04Z-
dc.date.issued2017-08-15en
dc.identifier.citationAli H, Yang X, Weber K, Schoenfeld WV, Davis KO (2017) Transmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cells. Microscopy and Microanalysis 23: 900–904. Available: http://dx.doi.org/10.1017/S1431927617012417.en
dc.identifier.issn1431-9276en
dc.identifier.issn1435-8115en
dc.identifier.doi10.1017/S1431927617012417en
dc.identifier.urihttp://hdl.handle.net/10754/626630-
dc.description.abstractIn this study, the cross-section of electron-selective titanium oxide (TiO2) contacts for n-type crystalline silicon solar cells were investigated by transmission electron microscopy. It was revealed that the excellent cell efficiency of 21.6% obtained on n-type cells, featuring SiO2/TiO2/Al rear contacts and after forming gas annealing (FGA) at 350°C, is due to strong surface passivation of SiO2/TiO2 stack as well as low contact resistivity at the Si/SiO2/TiO2 heterojunction. This can be attributed to the transformation of amorphous TiO2 to a conducting TiO2-x phase. Conversely, the low efficiency (9.8%) obtained on cells featuring an a-Si:H/TiO2/Al rear contact is due to severe degradation of passivation of the a-Si:H upon FGA.en
dc.description.sponsorshipThe authors would like to thank Eric Schneller for assistance with analysis of the quantum efficiency and reflectance data. The authors acknowledge financial support from the Australian Renewable Energy Agency (ARENA) under the Postdoctoral Fellowship. The authors would also like to acknowledge support for this work by the US Department of Energy, Office of Energy Efficiency and Renewable Energy, in the Solar Energy Technologies Program, under Award Number DE-EE0004947. Finally, the Materials Characterization Facility at University of Central Florida (UCF) is acknowledged for usage of its facilities.en
dc.publisherCambridge University Press (CUP)en
dc.subjectcrystalline siliconen
dc.subjectelectron-selective contacten
dc.subjectsolar cellen
dc.subjectTiO2en
dc.titleTransmission Electron Microscopy Studies of Electron-Selective Titanium Oxide Contacts in Silicon Solar Cellsen
dc.typeArticleen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.identifier.journalMicroscopy and Microanalysisen
dc.contributor.institutionC-Si Division, U.S. Photovoltaic Manufacturing Consortium, 12354 Research Parkway, Suite 210, Orlando, FL, 32826, United Statesen
dc.contributor.institutionFlorida Solar Energy Center, University of Central Florida, 1679 Clearlake Rd, Cocoa, FL, 32922, , United Statesen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Central Florida, 12760 Pegasus Drive, Engineering I, Suite 207, Orlando, FL, 32816, United Statesen
dc.contributor.institutionResearch School of Engineering, Australian National University, Engineering Building 32, North Road ACT 0200, North Rd, Canberra, ACT, 2601, Australiaen
dc.contributor.institutionCREOL, College of Optics and Photonics, University of Central Florida, 4304 Scorpius St, Orlando, FL, 32816, United Statesen
kaust.authorYang, Xinboen
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