A general circuit model for spintronic devices under electric and magnetic fields

Handle URI:
http://hdl.handle.net/10754/626596
Title:
A general circuit model for spintronic devices under electric and magnetic fields
Authors:
Alawein, Meshal ( 0000-0003-4561-3225 ) ; Fariborzi, Hossein ( 0000-0002-7828-0239 )
Abstract:
In this work, we present a circuit model of diffusive spintronic devices capable of capturing the effects of both electric and magnetic fields. Starting from a modified version of the well-established drift-diffusion equations, we derive general equivalent circuit models of semiconducting/metallic nonmagnets and metallic ferromagnets. In contrast to other models that are based on steady-state transport equations which might also neglect certain effects such as thermal fluctuations, spin dissipation in the ferromagnets, and spin precession under magnetic fields, our model incorporates most of the important physics and is based on a time-dependent formulation. An application of our model is shown through simulations of a nonlocal spin-valve under the presence of a magnetic field, where we reproduce experimental results of electrical measurements that demonstrate the phenomena of spin precession and dephasing (“Hanle effect”).
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Alawein M, Fariborzi H (2017) A general circuit model for spintronic devices under electric and magnetic fields. 2017 47th European Solid-State Device Research Conference (ESSDERC). Available: http://dx.doi.org/10.1109/essderc.2017.8066600.
Publisher:
IEEE
Journal:
2017 47th European Solid-State Device Research Conference (ESSDERC)
Conference/Event name:
47th European Solid-State Device Research Conference, ESSDERC 2017
Issue Date:
25-Oct-2017
DOI:
10.1109/essderc.2017.8066600
Type:
Conference Paper
Sponsors:
The authors would like to thank Aurelien Manchon from King Abdullah University of Science and Technology for the helpful comments and discussions.
Additional Links:
http://ieeexplore.ieee.org/document/8066600/
Appears in Collections:
Conference Papers; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAlawein, Meshalen
dc.contributor.authorFariborzi, Hosseinen
dc.date.accessioned2018-01-01T12:19:02Z-
dc.date.available2018-01-01T12:19:02Z-
dc.date.issued2017-10-25en
dc.identifier.citationAlawein M, Fariborzi H (2017) A general circuit model for spintronic devices under electric and magnetic fields. 2017 47th European Solid-State Device Research Conference (ESSDERC). Available: http://dx.doi.org/10.1109/essderc.2017.8066600.en
dc.identifier.doi10.1109/essderc.2017.8066600en
dc.identifier.urihttp://hdl.handle.net/10754/626596-
dc.description.abstractIn this work, we present a circuit model of diffusive spintronic devices capable of capturing the effects of both electric and magnetic fields. Starting from a modified version of the well-established drift-diffusion equations, we derive general equivalent circuit models of semiconducting/metallic nonmagnets and metallic ferromagnets. In contrast to other models that are based on steady-state transport equations which might also neglect certain effects such as thermal fluctuations, spin dissipation in the ferromagnets, and spin precession under magnetic fields, our model incorporates most of the important physics and is based on a time-dependent formulation. An application of our model is shown through simulations of a nonlocal spin-valve under the presence of a magnetic field, where we reproduce experimental results of electrical measurements that demonstrate the phenomena of spin precession and dephasing (“Hanle effect”).en
dc.description.sponsorshipThe authors would like to thank Aurelien Manchon from King Abdullah University of Science and Technology for the helpful comments and discussions.en
dc.publisherIEEEen
dc.relation.urlhttp://ieeexplore.ieee.org/document/8066600/en
dc.titleA general circuit model for spintronic devices under electric and magnetic fieldsen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journal2017 47th European Solid-State Device Research Conference (ESSDERC)en
dc.conference.date2017-09-11 to 2017-09-14en
dc.conference.name47th European Solid-State Device Research Conference, ESSDERC 2017en
dc.conference.locationLeuven, BELen
kaust.authorAlawein, Meshalen
kaust.authorFariborzi, Hosseinen
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