Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Handle URI:
http://hdl.handle.net/10754/626578
Title:
Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures
Authors:
Sun, Haiding ( 0000-0001-8664-666X ) ; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Liao, Che-Hao; Guo, Wenzhe; Alfaraj, Nasir ( 0000-0002-0429-9439 ) ; Li, Kuang-Hui; Anjum, Dalaver H.; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang ( 0000-0002-4434-365X )
Abstract:
We reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Advanced Semiconductor Laboratory; Imaging and Characterization Core Lab
Citation:
Sun H, Wu F, Park YJ, Al tahtamouni T. M., Liao C-H, et al. (2017) Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures. Applied Physics Express 11: 011001. Available: http://dx.doi.org/10.7567/APEX.11.011001.
Publisher:
Japan Society of Applied Physics
Journal:
Applied Physics Express
KAUST Grant Number:
REP/1/3189-01-01; BAS/1/1664-01-01; BAS/1/1664-01-07; GCC-2017-007
Issue Date:
18-Dec-2017
DOI:
10.7567/APEX.11.011001
Type:
Article
ISSN:
1882-0778; 1882-0786
Sponsors:
The KAUST authors acknowledge the support of the GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.
Additional Links:
http://iopscience.iop.org/article/10.7567/APEX.11.011001/meta
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Haidingen
dc.contributor.authorWu, Fengen
dc.contributor.authorPark, Young Jaeen
dc.contributor.authorAl tahtamouni, T. M.en
dc.contributor.authorLiao, Che-Haoen
dc.contributor.authorGuo, Wenzheen
dc.contributor.authorAlfaraj, Nasiren
dc.contributor.authorLi, Kuang-Huien
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorDetchprohm, Theeradetchen
dc.contributor.authorDupuis, Russell D.en
dc.contributor.authorLi, Xiaohangen
dc.date.accessioned2018-01-01T12:19:00Z-
dc.date.available2018-01-01T12:19:00Z-
dc.date.issued2017-12-18en
dc.identifier.citationSun H, Wu F, Park YJ, Al tahtamouni T. M., Liao C-H, et al. (2017) Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures. Applied Physics Express 11: 011001. Available: http://dx.doi.org/10.7567/APEX.11.011001.en
dc.identifier.issn1882-0778en
dc.identifier.issn1882-0786en
dc.identifier.doi10.7567/APEX.11.011001en
dc.identifier.urihttp://hdl.handle.net/10754/626578-
dc.description.abstractWe reveal the microstructure and dislocation behavior in 20-pair B0.14Al0.86N/Al0.70Ga0.30N multiple-stack heterostructures (MSHs) exhibiting an increasing dislocation density along the c-axis, which is attributed to the continuous generation of dislocations (edge and mixed-type) within the individual B0.14Al0.86N layers. At the MSH interfaces, the threading dislocations were accompanied by a string of V-shape pits extending to the surface, leading to interface roughening and the formation of surface columnar features. Strain maps indicated an approximately 1.5% tensile strain and 1% compressive strain in the B0.14Al0.86N and Al0.70Ga0.30N layers, respectively. Twin structures were observed, and the MSH eventually changed from monocrystalline to polycrystalline.en
dc.description.sponsorshipThe KAUST authors acknowledge the support of the GCC Research Program REP/1/3189-01-01, Baseline BAS/1/1664-01-01, and Equipment BAS/1/1664-01-07. The work at QU was supported by the GCC Research Program GCC-2017-007. The work at the Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.en
dc.publisherJapan Society of Applied Physicsen
dc.relation.urlhttp://iopscience.iop.org/article/10.7567/APEX.11.011001/metaen
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.7567/APEX.11.011001.en
dc.titleRevealing microstructure and dislocation behavior in BAlN/AlGaN heterostructuresen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentAdvanced Semiconductor Laboratoryen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalApplied Physics Expressen
dc.eprint.versionPost-printen
dc.contributor.institutionCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, U.S.A.en
dc.contributor.institutionMaterials Science and Technology Program, College of Arts and Sciences, Qatar University, Doha 2713, Qataren
kaust.authorSun, Haidingen
kaust.authorWu, Fengen
kaust.authorLiao, Che-Haoen
kaust.authorGuo, Wenzheen
kaust.authorAlfaraj, Nasiren
kaust.authorLi, Kuang-Huien
kaust.authorAnjum, Dalaver H.en
kaust.authorLi, Xiaohangen
kaust.grant.numberREP/1/3189-01-01en
kaust.grant.numberBAS/1/1664-01-01en
kaust.grant.numberBAS/1/1664-01-07en
kaust.grant.numberGCC-2017-007en
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