Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

Handle URI:
http://hdl.handle.net/10754/626449
Title:
Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes
Authors:
Sun, Haiding; Shakfa, Mohammad Khaled; Muhammed, Mufasila; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Li, Kuang-Hui; Lin, Ronghui ( 0000-0002-7664-8845 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Roqan, Iman S. ( 0000-0001-7442-4330 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Li, Xiaohang ( 0000-0002-4434-365X )
Abstract:
Spontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface dangling bonds and oxidized nitrides (Ga-O or Al-O bonds) at the surface as we observe the change of the carrier lifetime before and after the passivation. Thus, our results highlight the possibility of employing this process for the realization of high performance nanowire UV emitters.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory; Physical Sciences and Engineering (PSE) Division
Citation:
Sun H, Shakfa MK, Muhammed M, Janjua B, Li K, et al. (2017) Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes. ACS Photonics. Available: http://dx.doi.org/10.1021/acsphotonics.7b01235.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Photonics
KAUST Grant Number:
BAS/1/1614-01-01; BAS/1/1664-01-01
Issue Date:
19-Dec-2017
DOI:
10.1021/acsphotonics.7b01235
Type:
Article
ISSN:
2330-4022; 2330-4022
Sponsors:
We acknowledge the financial support from King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01 and BAS/1/1664-01-01. Also, BSO, TKN, MKS and BJ gratefully acknowledge funding support from King Abdulaziz City for Science and Technology, grant no. KACST TIC R2-FP-008. The time-resolved PL measurements have been carried out and analyzed by M. M. Muhammed and I. S. Roqan.
Additional Links:
http://pubs.acs.org/doi/10.1021/acsphotonics.7b01235
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Haidingen
dc.contributor.authorShakfa, Mohammad Khaleden
dc.contributor.authorMuhammed, Mufasilaen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorLi, Kuang-Huien
dc.contributor.authorLin, Ronghuien
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorLi, Xiaohangen
dc.date.accessioned2017-12-27T13:11:16Z-
dc.date.available2017-12-27T13:11:16Z-
dc.date.issued2017-12-19en
dc.identifier.citationSun H, Shakfa MK, Muhammed M, Janjua B, Li K, et al. (2017) Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes. ACS Photonics. Available: http://dx.doi.org/10.1021/acsphotonics.7b01235.en
dc.identifier.issn2330-4022en
dc.identifier.issn2330-4022en
dc.identifier.doi10.1021/acsphotonics.7b01235en
dc.identifier.urihttp://hdl.handle.net/10754/626449-
dc.description.abstractSpontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface dangling bonds and oxidized nitrides (Ga-O or Al-O bonds) at the surface as we observe the change of the carrier lifetime before and after the passivation. Thus, our results highlight the possibility of employing this process for the realization of high performance nanowire UV emitters.en
dc.description.sponsorshipWe acknowledge the financial support from King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01 and BAS/1/1664-01-01. Also, BSO, TKN, MKS and BJ gratefully acknowledge funding support from King Abdulaziz City for Science and Technology, grant no. KACST TIC R2-FP-008. The time-resolved PL measurements have been carried out and analyzed by M. M. Muhammed and I. S. Roqan.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/10.1021/acsphotonics.7b01235en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acsphotonics.7b01235.en
dc.subjectAluminum gallium nitride nanowireen
dc.subjectpassivationen
dc.subjectultraviolet light emitting diodeen
dc.subjectpotassium hydroxideen
dc.subjectsurface oxides and statesen
dc.subjectsurface recombinationen
dc.titleSurface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Photonicsen
dc.eprint.versionPost-printen
kaust.authorSun, Haidingen
kaust.authorShakfa, Mohammad Khaleden
kaust.authorMuhammed, Mufasilaen
kaust.authorJanjua, Bilalen
kaust.authorLi, Kuang-Huien
kaust.authorLin, Ronghuien
kaust.authorNg, Tien Kheeen
kaust.authorRoqan, Iman S.en
kaust.authorOoi, Boon S.en
kaust.authorLi, Xiaohangen
kaust.grant.numberBAS/1/1614-01-01en
kaust.grant.numberBAS/1/1664-01-01en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.