Anomalous Hall effect scaling in ferromagnetic thin films

Handle URI:
http://hdl.handle.net/10754/626405
Title:
Anomalous Hall effect scaling in ferromagnetic thin films
Authors:
Grigoryan, Vahram L.; Xiao, Jiang; Wang, Xuhui; Xia, Ke
Abstract:
We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Grigoryan VL, Xiao J, Wang X, Xia K (2017) Anomalous Hall effect scaling in ferromagnetic thin films. Physical Review B 96. Available: http://dx.doi.org/10.1103/PhysRevB.96.144426.
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
23-Oct-2017
DOI:
10.1103/PhysRevB.96.144426
Type:
Article
ISSN:
2469-9950; 2469-9969
Sponsors:
J.X. thanks X. Jin of Fudan University and A. Granovsky of Moscow State University for valuable discussions. This work was supported by the National Key Research and Development Program of China under Grants No. 2017YFA0303300 and No. 2016YFA0300702, the National Natural Science Foundation of China under Grants No. 11474065, No. 11734004, No. 61774017, and No. 21421003.
Additional Links:
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.144426
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGrigoryan, Vahram L.en
dc.contributor.authorXiao, Jiangen
dc.contributor.authorWang, Xuhuien
dc.contributor.authorXia, Keen
dc.date.accessioned2017-12-21T13:57:03Z-
dc.date.available2017-12-21T13:57:03Z-
dc.date.issued2017-10-23en
dc.identifier.citationGrigoryan VL, Xiao J, Wang X, Xia K (2017) Anomalous Hall effect scaling in ferromagnetic thin films. Physical Review B 96. Available: http://dx.doi.org/10.1103/PhysRevB.96.144426.en
dc.identifier.issn2469-9950en
dc.identifier.issn2469-9969en
dc.identifier.doi10.1103/PhysRevB.96.144426en
dc.identifier.urihttp://hdl.handle.net/10754/626405-
dc.description.abstractWe propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.en
dc.description.sponsorshipJ.X. thanks X. Jin of Fudan University and A. Granovsky of Moscow State University for valuable discussions. This work was supported by the National Key Research and Development Program of China under Grants No. 2017YFA0303300 and No. 2016YFA0300702, the National Natural Science Foundation of China under Grants No. 11474065, No. 11734004, No. 61774017, and No. 21421003.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.96.144426en
dc.rightsArchived with thanks to PHYSICAL REVIEW Ben
dc.titleAnomalous Hall effect scaling in ferromagnetic thin filmsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionBeijing Normal University, Zhuhai, Guangdong, 519087, , Chinaen
dc.contributor.institutionCenter for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, , Chinaen
dc.contributor.institutionInstitute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai, 200433, , Chinaen
dc.contributor.institutionCollaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, , Chinaen
dc.contributor.institutionDepartment of Physics, State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433, , Chinaen
dc.contributor.institutionKwantum Links, Benoordenhoutseweg 23, The Hague, 2596 BA, , Netherlandsen
dc.contributor.institutionSynergetic Innovation Center for Quantum Effects and Applications (SICQEA), Hunan Normal University, Changsha, 410081, , Chinaen
kaust.authorWang, Xuhuien
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