Thermodynamic photoinduced disorder in AlGaN nanowires

Handle URI:
http://hdl.handle.net/10754/626363
Title:
Thermodynamic photoinduced disorder in AlGaN nanowires
Authors:
Alfaraj, Nasir ( 0000-0002-0429-9439 ) ; Muhammed, Mufasila Mumthaz; Li, Kuang-Hui; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Aljefri, Renad A.; Sun, Haiding ( 0000-0001-8664-666X ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Roqan, Iman S. ( 0000-0001-7442-4330 ) ; Li, Xiaohang ( 0000-0002-4434-365X )
Abstract:
In this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires through their steady-state and transient photoluminescence properties. We correlate the energy exchange during the photoexcitation and photoemission processes of the light–solid reaction and the generation of photoinduced entropy of the nanowires using temperature-dependent (6 K to 290 K) photoluminescence. We observed an oscillatory trend in the generated entropy of the system below 200 K, with an oscillation frequency that was significantly lower than what we have previously observed in InGaN/GaN nanowires. In contrast to the sharp increase in generated entropy at temperatures close to room temperature in InGaN/GaN nanowires, an insignificant increase was observed in AlGaN nanowires, indicating lower degrees of disorder-induced uncertainty in the wider bandgap semiconductor. We conjecture that the enhanced atomic ordering in AlGaN caused lower degrees of disorder-induced uncertainty related to the energy of states involved in thermionic transitions; in keeping with this conjecture, we observed lower oscillation frequency below 200 K and a stable behavior in the generated entropy at temperatures close to room temperature.
KAUST Department:
Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia; Semiconductor and Material Spectroscopy Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia; Photonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
Citation:
Thermodynamic photoinduced disorder in AlGaN nanowires 2017, 7 (12):125113 AIP Advances
Publisher:
American Institute of Physics
Journal:
AIP Advances
Issue Date:
13-Dec-2017
DOI:
10.1063/1.5003443
Type:
Article
ISSN:
2158-3226
Sponsors:
This publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1664-01-01 and BAS/1/1647-01-05. B.J., T.K.N., and B.S.O. acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and KAUST baseline funding, BAS/1/1614-01-01.
Additional Links:
http://aip.scitation.org/doi/10.1063/1.5003443; https://doi.org/10.1063/1.5003443; https://www.researchgate.net/publication/321777725_Thermodynamic_photoinduced_disorder_in_AlGaN_nanowires
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Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorAlfaraj, Nasiren
dc.contributor.authorMuhammed, Mufasila Mumthazen
dc.contributor.authorLi, Kuang-Huien
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorAljefri, Renad A.en
dc.contributor.authorSun, Haidingen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorLi, Xiaohangen
dc.date.accessioned2017-12-14T06:14:10Z-
dc.date.available2017-12-14T06:14:10Z-
dc.date.issued2017-12-13-
dc.identifier.citationThermodynamic photoinduced disorder in AlGaN nanowires 2017, 7 (12):125113 AIP Advancesen
dc.identifier.issn2158-3226-
dc.identifier.doi10.1063/1.5003443-
dc.identifier.urihttp://hdl.handle.net/10754/626363-
dc.description.abstractIn this study, we examine thermodynamic photoinduced disorder in AlGaN nanowires through their steady-state and transient photoluminescence properties. We correlate the energy exchange during the photoexcitation and photoemission processes of the light–solid reaction and the generation of photoinduced entropy of the nanowires using temperature-dependent (6 K to 290 K) photoluminescence. We observed an oscillatory trend in the generated entropy of the system below 200 K, with an oscillation frequency that was significantly lower than what we have previously observed in InGaN/GaN nanowires. In contrast to the sharp increase in generated entropy at temperatures close to room temperature in InGaN/GaN nanowires, an insignificant increase was observed in AlGaN nanowires, indicating lower degrees of disorder-induced uncertainty in the wider bandgap semiconductor. We conjecture that the enhanced atomic ordering in AlGaN caused lower degrees of disorder-induced uncertainty related to the energy of states involved in thermionic transitions; in keeping with this conjecture, we observed lower oscillation frequency below 200 K and a stable behavior in the generated entropy at temperatures close to room temperature.en
dc.description.sponsorshipThis publication is based upon work supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1664-01-01 and BAS/1/1647-01-05. B.J., T.K.N., and B.S.O. acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and KAUST baseline funding, BAS/1/1614-01-01.en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.5003443en
dc.relation.urlhttps://doi.org/10.1063/1.5003443en
dc.relation.urlhttps://www.researchgate.net/publication/321777725_Thermodynamic_photoinduced_disorder_in_AlGaN_nanowiresen
dc.rightsArchived with thanks to AIP Advances. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en
dc.subjectNanowiresen
dc.subjectEntropyen
dc.subjectPhotoluminescenceen
dc.subjectSemiconductorsen
dc.subjectPhotoexcitationen
dc.subjectPhotoluminescence lifetimeen
dc.titleThermodynamic photoinduced disorder in AlGaN nanowiresen
dc.typeArticleen
dc.contributor.departmentAdvanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabiaen
dc.contributor.departmentSemiconductor and Material Spectroscopy Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabiaen
dc.contributor.departmentPhotonics Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabiaen
dc.identifier.journalAIP Advancesen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
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