Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

Handle URI:
http://hdl.handle.net/10754/626289
Title:
Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering
Authors:
Liu, Kaikai ( 0000-0002-1360-9646 ) ; Sun, Haiding ( 0000-0001-8664-666X ) ; Alqatari, Feras ( 0000-0001-7620-4569 ) ; Guo, Wenzhe ( 0000-0003-2410-7315 ) ; Liu, Xinwei; Li, Jingtao; Torres Castanedo, Carlos G; Li, Xiaohang ( 0000-0002-4434-365X )
Abstract:
The spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.
KAUST Department:
King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia
Citation:
Liu K, Sun H, AlQatari F, Guo W, Liu X, et al. (2017) Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering. Applied Physics Letters 111: 222106. Available: http://dx.doi.org/10.1063/1.5008451.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
KAUST Grant Number:
REP/1/3189-01-01; BAS/1/1664-01-01
Issue Date:
30-Nov-2017
DOI:
10.1063/1.5008451
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
The KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01 and KAUST Baseline Fund BAS/1/1664-01-01.
Additional Links:
http://aip.scitation.org/doi/10.1063/1.5008451
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorLiu, Kaikaien
dc.contributor.authorSun, Haidingen
dc.contributor.authorAlqatari, Ferasen
dc.contributor.authorGuo, Wenzheen
dc.contributor.authorLiu, Xinweien
dc.contributor.authorLi, Jingtaoen
dc.contributor.authorTorres Castanedo, Carlos Gen
dc.contributor.authorLi, Xiaohangen
dc.date.accessioned2017-12-05T06:12:00Z-
dc.date.available2017-12-05T06:12:00Z-
dc.date.issued2017-11-30en
dc.identifier.citationLiu K, Sun H, AlQatari F, Guo W, Liu X, et al. (2017) Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering. Applied Physics Letters 111: 222106. Available: http://dx.doi.org/10.1063/1.5008451.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.5008451en
dc.identifier.urihttp://hdl.handle.net/10754/626289-
dc.description.abstractThe spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.en
dc.description.sponsorshipThe KAUST authors would like to acknowledge the support of GCC Research Program REP/1/3189-01-01 and KAUST Baseline Fund BAS/1/1664-01-01.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.5008451en
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.5008451.en
dc.titleWurtzite BAlN and BGaN alloys for heterointerface polarization engineeringen
dc.typeArticleen
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabiaen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorLiu, Kaikaien
kaust.authorSun, Haidingen
kaust.authorAlqatari, Ferasen
kaust.authorGuo, Wenzheen
kaust.authorLiu, Xinweien
kaust.authorLi, Jingtaoen
kaust.authorTorres Castanedo, Carlos Gen
kaust.authorLi, Xiaohangen
kaust.grant.numberREP/1/3189-01-01en
kaust.grant.numberBAS/1/1664-01-01en
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