Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

Handle URI:
http://hdl.handle.net/10754/626275
Title:
Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography
Authors:
Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G. ( 0000-0002-2620-3346 ) ; Semple, James; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 )
Abstract:
Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5–3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device’s unique architecture, the detectors exhibit high responsivity (≈79 A W–1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm–2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm–2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Wyatt-Moon G, Georgiadou DG, Semple J, Anthopoulos TD (2017) Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b12942.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
28-Nov-2017
DOI:
10.1021/acsami.7b12942
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
G.W.M. and T.D.A. acknowledge the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/G037515/1. D.G.G. and T.D.A. acknowledge financial support from the European Union’s Horizon 2020 research and innovation programme (under the Marie Skłodowska-Curie grant agreement 706707).
Additional Links:
http://pubs.acs.org/doi/10.1021/acsami.7b12942
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWyatt-Moon, Gwenhiviren
dc.contributor.authorGeorgiadou, Dimitra G.en
dc.contributor.authorSemple, Jamesen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2017-12-04T12:57:32Z-
dc.date.available2017-12-04T12:57:32Z-
dc.date.issued2017-11-28en
dc.identifier.citationWyatt-Moon G, Georgiadou DG, Semple J, Anthopoulos TD (2017) Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b12942.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.7b12942en
dc.identifier.urihttp://hdl.handle.net/10754/626275-
dc.description.abstractAdhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5–3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device’s unique architecture, the detectors exhibit high responsivity (≈79 A W–1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm–2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm–2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.en
dc.description.sponsorshipG.W.M. and T.D.A. acknowledge the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/G037515/1. D.G.G. and T.D.A. acknowledge financial support from the European Union’s Horizon 2020 research and innovation programme (under the Marie Skłodowska-Curie grant agreement 706707).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/10.1021/acsami.7b12942en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/10.1021/acsami.7b12942.en
dc.subjectcoplanar electrodesen
dc.subjectphotodiodeen
dc.subjectphotosensitivityen
dc.subjectresponsivityen
dc.subjectsolution-processeden
dc.titleDeep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithographyen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Applied Materials & Interfacesen
dc.eprint.versionPost-printen
dc.contributor.institutionCentre for Plastic Electronics and Department of Physics, Blackett Laboratory, Imperial College London, London SW7 2BW, U.K.en
kaust.authorAnthopoulos, Thomas D.en
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