Highly Tunable Electrostatic Nanomechanical Resonators

Handle URI:
http://hdl.handle.net/10754/626235
Title:
Highly Tunable Electrostatic Nanomechanical Resonators
Authors:
Kazmi, Syed Naveed Riaz; Hajjaj, Amal Z.; Hafiz, Md Abdullah Al ( 0000-0002-1257-5093 ) ; Da Costa, Pedro M. F. J. ( 0000-0002-1993-6701 ) ; Younis, Mohammad I. ( 0000-0002-9491-1838 )
Abstract:
There has been significant interest towards highly tunable resonators for on-demand frequency selection in modern communication systems. Here, we report highly tunable electrostatically actuated silicon-based nanomechanical resonators. In-plane doubly-clamped bridges, slightly curved as shallow arches due to residual stresses, are fabricated using standard electron beam lithography and surface nanomachining. The resonators are designed such that the effect of mid-plane stretching dominates the softening effect of the electrostatic force. This is achieved by controlling the gap-to-thickness ratio and by exploiting the initial curvature of the structure from fabrication. We demonstrate considerable increase in the resonance frequency of nanoresonators with the dc bias voltages up to 108% for 180 nm thick structures with a transduction gap of 1 <formula><tex>$mu$</tex></formula>m separating them from the driving/sensing electrodes. The experimental results are found in good agreement with those of a nonlinear analytical model based on the Euler-Bernoulli beam theory. As a potential application, we demonstrate a tunable narrow band-pass filter using two electrically coupled nanomechanical arch resonators with varied dc bias voltages.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Kazmi SNR, Hajjaj AZ, Hafiz MAA, Costa PMFJ, Younis MI (2017) Highly Tunable Electrostatic Nanomechanical Resonators. IEEE Transactions on Nanotechnology: 1–1. Available: http://dx.doi.org/10.1109/TNANO.2017.2777519.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Nanotechnology
Issue Date:
24-Nov-2017
DOI:
10.1109/TNANO.2017.2777519
Type:
Article
ISSN:
1536-125X; 1941-0085
Sponsors:
This work was supported by funding from King Abdullah University of Science and Technology (KAUST) research grant.
Additional Links:
http://ieeexplore.ieee.org/document/8119846/
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKazmi, Syed Naveed Riazen
dc.contributor.authorHajjaj, Amal Z.en
dc.contributor.authorHafiz, Md Abdullah Alen
dc.contributor.authorDa Costa, Pedro M. F. J.en
dc.contributor.authorYounis, Mohammad I.en
dc.date.accessioned2017-11-29T11:13:55Z-
dc.date.available2017-11-29T11:13:55Z-
dc.date.issued2017-11-24en
dc.identifier.citationKazmi SNR, Hajjaj AZ, Hafiz MAA, Costa PMFJ, Younis MI (2017) Highly Tunable Electrostatic Nanomechanical Resonators. IEEE Transactions on Nanotechnology: 1–1. Available: http://dx.doi.org/10.1109/TNANO.2017.2777519.en
dc.identifier.issn1536-125Xen
dc.identifier.issn1941-0085en
dc.identifier.doi10.1109/TNANO.2017.2777519en
dc.identifier.urihttp://hdl.handle.net/10754/626235-
dc.description.abstractThere has been significant interest towards highly tunable resonators for on-demand frequency selection in modern communication systems. Here, we report highly tunable electrostatically actuated silicon-based nanomechanical resonators. In-plane doubly-clamped bridges, slightly curved as shallow arches due to residual stresses, are fabricated using standard electron beam lithography and surface nanomachining. The resonators are designed such that the effect of mid-plane stretching dominates the softening effect of the electrostatic force. This is achieved by controlling the gap-to-thickness ratio and by exploiting the initial curvature of the structure from fabrication. We demonstrate considerable increase in the resonance frequency of nanoresonators with the dc bias voltages up to 108% for 180 nm thick structures with a transduction gap of 1 <formula><tex>$mu$</tex></formula>m separating them from the driving/sensing electrodes. The experimental results are found in good agreement with those of a nonlinear analytical model based on the Euler-Bernoulli beam theory. As a potential application, we demonstrate a tunable narrow band-pass filter using two electrically coupled nanomechanical arch resonators with varied dc bias voltages.en
dc.description.sponsorshipThis work was supported by funding from King Abdullah University of Science and Technology (KAUST) research grant.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/8119846/en
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.subjectDoubly-clamped bridgesen
dc.subjectelectrostatic forceen
dc.subjectnanomechanical resonatoren
dc.subjectshallow archen
dc.subjecttunabilityen
dc.titleHighly Tunable Electrostatic Nanomechanical Resonatorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalIEEE Transactions on Nanotechnologyen
dc.eprint.versionPost-printen
kaust.authorKazmi, Syed Naveed Riazen
kaust.authorHajjaj, Amal Z.en
kaust.authorHafiz, Md Abdullah Alen
kaust.authorDa Costa, Pedro M. F. J.en
kaust.authorYounis, Mohammad I.en
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