Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers

Handle URI:
http://hdl.handle.net/10754/626229
Title:
Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers
Authors:
Ohkawa, Kazuhiro; Wang, Yaxin
Abstract:
GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Ohkawa K, Wang Y (2017) Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers. AOPC 2017: Optoelectronics and Micro/Nano-optics. Available: http://dx.doi.org/10.1117/12.2284460.
Publisher:
SPIE
Journal:
AOPC 2017: Optoelectronics and Micro/Nano-optics
Issue Date:
24-Oct-2017
DOI:
10.1117/12.2284460
Type:
Conference Paper
Sponsors:
Thanks are due to T. Teramoto for previous collaborations. This work was supported by Fundations (No. 61674051, No. 15JCYBJC52200, No. 20110711, No. KYDD07006)
Additional Links:
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10460/2284460/Effect-of-H-O-intentionally-doping-on-photoelectric-properties-in/10.1117/12.2284460.full
Appears in Collections:
Conference Papers; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorOhkawa, Kazuhiroen
dc.contributor.authorWang, Yaxinen
dc.date.accessioned2017-11-29T11:13:55Z-
dc.date.available2017-11-29T11:13:55Z-
dc.date.issued2017-10-24en
dc.identifier.citationOhkawa K, Wang Y (2017) Effect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layers. AOPC 2017: Optoelectronics and Micro/Nano-optics. Available: http://dx.doi.org/10.1117/12.2284460.en
dc.identifier.doi10.1117/12.2284460en
dc.identifier.urihttp://hdl.handle.net/10754/626229-
dc.description.abstractGaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3 source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.en
dc.description.sponsorshipThanks are due to T. Teramoto for previous collaborations. This work was supported by Fundations (No. 61674051, No. 15JCYBJC52200, No. 20110711, No. KYDD07006)en
dc.publisherSPIEen
dc.relation.urlhttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/10460/2284460/Effect-of-H-O-intentionally-doping-on-photoelectric-properties-in/10.1117/12.2284460.fullen
dc.rightsCopyright 2017 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.titleEffect of H, O intentionally doping on photoelectric properties in MOVPE-growth GaN layersen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalAOPC 2017: Optoelectronics and Micro/Nano-opticsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCollege of Electronic Engineering, Tianjin University of Technology and Education, Tianjin 300222, Chinaen
kaust.authorWang, Yaxinen
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