Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly

Handle URI:
http://hdl.handle.net/10754/626205
Title:
Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly
Authors:
Li, Henan; Shi, Yumeng; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Being a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Li H, Shi Y, Li L-J (2017) Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly. Carbon. Available: http://dx.doi.org/10.1016/j.carbon.2017.11.030.
Publisher:
Elsevier BV
Journal:
Carbon
Issue Date:
16-Nov-2017
DOI:
10.1016/j.carbon.2017.11.030
Type:
Article
ISSN:
0008-6223
Sponsors:
This work was supported by National Natural Science Foundation of China (Grant No. 51602200), the(Key)Project of Department of Education of Guangdong Province (Grant No. 2016KZDXM008), Shenzhen Peacock Plan (Grant No. KQTD2016053112042971), Natural Science Foundation of SZU (Grant No. 2017011), and King Abdullah University of Science and Technology, Saudi Arabia.
Additional Links:
http://www.sciencedirect.com/science/article/pii/S0008622317311442
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Henanen
dc.contributor.authorShi, Yumengen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2017-11-23T11:51:30Z-
dc.date.available2017-11-23T11:51:30Z-
dc.date.issued2017-11-16en
dc.identifier.citationLi H, Shi Y, Li L-J (2017) Synthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assembly. Carbon. Available: http://dx.doi.org/10.1016/j.carbon.2017.11.030.en
dc.identifier.issn0008-6223en
dc.identifier.doi10.1016/j.carbon.2017.11.030en
dc.identifier.urihttp://hdl.handle.net/10754/626205-
dc.description.abstractBeing a representative candidate from the two-dimensional (2D) materials family, graphene has been one of the most intensively researched candidates because of its ultrahigh carrier mobility, quantum Hall effects, excellent mechanical property and high optical transmittance. Unfortunately, the lack of a band gap makes graphene a poor fit for digital electronics, where the current on/off ratio is critical. Huge efforts have been advocated to discover new 2D layered materials with wonderful properties, which complements the needs of 2D electronics. Appropriately designed graphene based hybrid structure could perform better than its counterpart alone. The graphene hybrid structure soon become one of the most exciting frontiers in advanced 2D materials, and many efforts have been made to create artificial heterostructures by assembling of graphene with various layered materials. In this review, we present the recent development in synthesis and applications of graphene based 2D heterostructures. Although 2D transition metal dichalcogenide semiconductors have been demonstrated as strong candidates for next-generation electronics and optoelectronics, by combining advantages of various properties of 2D materials together with graphene, it is highly possible to build entire digital circuits using atomically thin components, and create many novel devices that can be utilized in different areas.en
dc.description.sponsorshipThis work was supported by National Natural Science Foundation of China (Grant No. 51602200), the(Key)Project of Department of Education of Guangdong Province (Grant No. 2016KZDXM008), Shenzhen Peacock Plan (Grant No. KQTD2016053112042971), Natural Science Foundation of SZU (Grant No. 2017011), and King Abdullah University of Science and Technology, Saudi Arabia.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0008622317311442en
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Carbon. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Carbon, [, , (2017-11-16)] DOI: 10.1016/j.carbon.2017.11.030 . © 2017. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.titleSynthesis and Optoelectronic Applications of Graphene/Transition Metal Dichalcogenides Flat-Pack Assemblyen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalCarbonen
dc.eprint.versionPost-printen
dc.contributor.institutionCollege of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, Chinaen
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Chinaen
kaust.authorLi, Lain-Jongen
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