Gallium nitride on gallium oxide substrate for integrated nonlinear optics

Handle URI:
http://hdl.handle.net/10754/626199
Title:
Gallium nitride on gallium oxide substrate for integrated nonlinear optics
Authors:
Awan, Kashif M.; Dolgaleva, Ksenia; Mumthaz Muhammed, Mufasila; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
Gallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga<inf>2</inf>O<inf>3</inf>) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al<inf>2</inf>O<inf>3</inf>) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Awan KM, Dolgaleva K, Muhammed MM, Roqan IS (2017) Gallium nitride on gallium oxide substrate for integrated nonlinear optics. 2017 Photonics North (PN). Available: http://dx.doi.org/10.1109/PN.2017.8090587.
Publisher:
IEEE
Journal:
2017 Photonics North (PN)
Issue Date:
22-Nov-2017
DOI:
10.1109/PN.2017.8090587
Type:
Conference Paper
Additional Links:
http://ieeexplore.ieee.org/document/8090587/
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAwan, Kashif M.en
dc.contributor.authorDolgaleva, Kseniaen
dc.contributor.authorMumthaz Muhammed, Mufasilaen
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2017-11-23T11:51:29Z-
dc.date.available2017-11-23T11:51:29Z-
dc.date.issued2017-11-22en
dc.identifier.citationAwan KM, Dolgaleva K, Muhammed MM, Roqan IS (2017) Gallium nitride on gallium oxide substrate for integrated nonlinear optics. 2017 Photonics North (PN). Available: http://dx.doi.org/10.1109/PN.2017.8090587.en
dc.identifier.doi10.1109/PN.2017.8090587en
dc.identifier.urihttp://hdl.handle.net/10754/626199-
dc.description.abstractGallium Nitride (GaN), being a direct bandgap semiconductor with a wide bandgap and high thermal stability, is attractive for optoelectronic and electronic applications. Furthermore, due to its high optical nonlinearity — the characteristic of all 111-V semiconductors — GaN is also expected to be a suitable candidate for integrated nonlinear photonic circuits for a plethora of apphcations, ranging from on-chip wavelength conversion to quantum computing. Although GaN devices are in commercial production, it still suffers from lack of a suitable substrate material to reduce structural defects like high densities of threading dislocations (TDs), stacking faults, and grain boundaries. These defects significandy deteriorate the optical quality of the epi-grown GaN layer, since they act as non-radiative recombination centers. Recent studies have shown that GaN grown on (−201) β-Gallium Oxide (Ga<inf>2</inf>O<inf>3</inf>) has superior optical quality due to a better lattice matching as compared to GaN grown on Sapphire (Al<inf>2</inf>O<inf>3</inf>) [1-3]. In this work, we report on the fabrication of GaN waveguides on GaiOj substrate and their optical characterization to assess their feasibihty for efficient four-wave mixing (FWM).en
dc.publisherIEEEen
dc.relation.urlhttp://ieeexplore.ieee.org/document/8090587/en
dc.rightsArchived with thanks to Photonics North (PN), 2017en
dc.subjectGallium nitrideen
dc.subjectOptical device fabricationen
dc.subjectOptical filmsen
dc.subjectOptical mixingen
dc.subjectOptical waveguidesen
dc.subjectOptical wavelength conversionen
dc.titleGallium nitride on gallium oxide substrate for integrated nonlinear opticsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journal2017 Photonics North (PN)en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSchool of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, Canadaen
kaust.authorMumthaz Muhammed, Mufasilaen
kaust.authorRoqan, Iman S.en
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