A Microbeam Resonator with Partial Electrodes for Logic and Memory Elements

Handle URI:
http://hdl.handle.net/10754/626150
Title:
A Microbeam Resonator with Partial Electrodes for Logic and Memory Elements
Authors:
Hafiz, Md Abdullah Al ( 0000-0002-1257-5093 ) ; Ilyas, Saad ( 0000-0002-9389-9718 ) ; Ahmed, Sally; Younis, Mohammad I. ( 0000-0002-9491-1838 ) ; Fariborzi, Hossein ( 0000-0002-7828-0239 )
Abstract:
We demonstrate logic and memory elements based on an in-plane clamped-clamped microbeam resonator. The micro-resonator is electrostatically actuated through a drive electrode and the motional signal is capacitively sensed at a sense electrode, while the resonance characteristics are modulated by DC voltage pulses provided at two separate partial electrodes, independent of the drive/sense electrodes. For the logic applications, we use two separate electrodes to provide DC voltages defined as the logic inputs. The high (low) motional signal at on-resonance (off-resonance) state is defined as the logic output state “1” (“0”). For the memory operation, two stable vibrational states, high and low, within the hysteretic regime are defined as the memory states, “1” and “0”, respectively. We take advantage of the split electrode configuration to provide positive and negative DC voltage pulses selectively to set/reset the memory states (“1”/“0”) without affecting the driving and sensing terminals. Excluding the energy cost for supporting electronics, these devices consume energy in 10’s of picojoules per logic/memory operations. Furthermore, the devices are fabricated using silicon on insulator (SOI) wafers, have the potential for on-chip integration, and operate at moderate pressure (~1 Torr) and room temperature.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Hafiz MAA, Ilyas S, Ahmed S, Younis MI, Fariborzi H (2017) A Microbeam Resonator with Partial Electrodes for Logic and Memory Elements. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits: 1–1. Available: http://dx.doi.org/10.1109/JXCDC.2017.2772338.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
KAUST Grant Number:
OSR-2016-CRG5-3001
Issue Date:
10-Nov-2017
DOI:
10.1109/JXCDC.2017.2772338
Type:
Article
ISSN:
2329-9231
Sponsors:
This work was supported by King Abdullah University of Science and Technology (KAUST) office of sponsored research (OSR) under Award No. OSR-2016-CRG5-3001.
Additional Links:
http://ieeexplore.ieee.org/document/8103925/
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHafiz, Md Abdullah Alen
dc.contributor.authorIlyas, Saaden
dc.contributor.authorAhmed, Sallyen
dc.contributor.authorYounis, Mohammad I.en
dc.contributor.authorFariborzi, Hosseinen
dc.date.accessioned2017-11-14T12:46:05Z-
dc.date.available2017-11-14T12:46:05Z-
dc.date.issued2017-11-10en
dc.identifier.citationHafiz MAA, Ilyas S, Ahmed S, Younis MI, Fariborzi H (2017) A Microbeam Resonator with Partial Electrodes for Logic and Memory Elements. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits: 1–1. Available: http://dx.doi.org/10.1109/JXCDC.2017.2772338.en
dc.identifier.issn2329-9231en
dc.identifier.doi10.1109/JXCDC.2017.2772338en
dc.identifier.urihttp://hdl.handle.net/10754/626150-
dc.description.abstractWe demonstrate logic and memory elements based on an in-plane clamped-clamped microbeam resonator. The micro-resonator is electrostatically actuated through a drive electrode and the motional signal is capacitively sensed at a sense electrode, while the resonance characteristics are modulated by DC voltage pulses provided at two separate partial electrodes, independent of the drive/sense electrodes. For the logic applications, we use two separate electrodes to provide DC voltages defined as the logic inputs. The high (low) motional signal at on-resonance (off-resonance) state is defined as the logic output state “1” (“0”). For the memory operation, two stable vibrational states, high and low, within the hysteretic regime are defined as the memory states, “1” and “0”, respectively. We take advantage of the split electrode configuration to provide positive and negative DC voltage pulses selectively to set/reset the memory states (“1”/“0”) without affecting the driving and sensing terminals. Excluding the energy cost for supporting electronics, these devices consume energy in 10’s of picojoules per logic/memory operations. Furthermore, the devices are fabricated using silicon on insulator (SOI) wafers, have the potential for on-chip integration, and operate at moderate pressure (~1 Torr) and room temperature.en
dc.description.sponsorshipThis work was supported by King Abdullah University of Science and Technology (KAUST) office of sponsored research (OSR) under Award No. OSR-2016-CRG5-3001.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/8103925/en
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.subjectClamped-clamped Microbeam Resonatoren
dc.subjectElectromechanical Computationen
dc.subjectLogic Deviceen
dc.subjectPartial Electrodesen
dc.subjectRandom Access Memoryen
dc.titleA Microbeam Resonator with Partial Electrodes for Logic and Memory Elementsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Journal on Exploratory Solid-State Computational Devices and Circuitsen
dc.eprint.versionPost-printen
kaust.authorHafiz, Md Abdullah Alen
kaust.authorIlyas, Saaden
kaust.authorAhmed, Sallyen
kaust.authorYounis, Mohammad I.en
kaust.authorFariborzi, Hosseinen
kaust.grant.numberOSR-2016-CRG5-3001en
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