Electrostatically Tunable Nanomechanical Shallow Arches

Handle URI:
http://hdl.handle.net/10754/626137
Title:
Electrostatically Tunable Nanomechanical Shallow Arches
Authors:
Kazmi, Syed N. R.; Hajjaj, Amal Z.; Da Costa, Pedro M. F. J. ( 0000-0002-1993-6701 ) ; Younis, Mohammad I. ( 0000-0002-9491-1838 )
Abstract:
We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Mechanical Engineering Program
Publisher:
ASME
Journal:
Volume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystems
Issue Date:
3-Nov-2017
DOI:
10.1115/detc2017-67845
Type:
Conference Paper
Sponsors:
This work has been supported through King Abdullah University of Science and Technology (KAUST) research funds.
Additional Links:
http://proceedings.asmedigitalcollection.asme.org/proceeding.aspx?articleid=2662159
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Mechanical Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorKazmi, Syed N. R.en
dc.contributor.authorHajjaj, Amal Z.en
dc.contributor.authorDa Costa, Pedro M. F. J.en
dc.contributor.authorYounis, Mohammad I.en
dc.date.accessioned2017-11-09T06:50:41Z-
dc.date.available2017-11-09T06:50:41Z-
dc.date.issued2017-11-03en
dc.identifier.doi10.1115/detc2017-67845en
dc.identifier.urihttp://hdl.handle.net/10754/626137-
dc.description.abstractWe report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.en
dc.description.sponsorshipThis work has been supported through King Abdullah University of Science and Technology (KAUST) research funds.en
dc.publisherASMEen
dc.relation.urlhttp://proceedings.asmedigitalcollection.asme.org/proceeding.aspx?articleid=2662159en
dc.rightsArchived with thanks to Volume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystemsen
dc.titleElectrostatically Tunable Nanomechanical Shallow Archesen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMechanical Engineering Programen
dc.identifier.journalVolume 4: 22nd Design for Manufacturing and the Life Cycle Conference; 11th International Conference on Micro- and Nanosystemsen
dc.eprint.versionPost-printen
kaust.authorKazmi, Syed N. R.en
kaust.authorHajjaj, Amal Z.en
kaust.authorDa Costa, Pedro M. F. J.en
kaust.authorYounis, Mohammad I.en
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