Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer

Handle URI:
http://hdl.handle.net/10754/626118
Title:
Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer
Authors:
Priante, Davide ( 0000-0003-4540-2188 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Prabaswara, Aditya; Subedi, Ram Chandra; Elafandy, Rami T. ( 0000-0002-8529-2967 ) ; Lopatin, Sergei; Anjum, Dalaver H.; Zhao, Chao ( 0000-0002-9582-1068 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
In this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.
KAUST Department:
Photonics Laboratory; Imaging and Characterization Core Lab
Citation:
Priante D, Janjua B, Prabaswara A, Subedi RC, Elafandy RT, et al. (2017) Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer. Optical Materials Express 7: 4214. Available: http://dx.doi.org/10.1364/ome.7.004214.
Publisher:
The Optical Society
Journal:
Optical Materials Express
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
2-Nov-2017
DOI:
10.1364/ome.7.004214
Type:
Article
ISSN:
2159-3930
Sponsors:
King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.
Additional Links:
https://www.osapublishing.org/ome/abstract.cfm?uri=ome-7-12-4214
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorPriante, Davideen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorSubedi, Ram Chandraen
dc.contributor.authorElafandy, Rami T.en
dc.contributor.authorLopatin, Sergeien
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorZhao, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-11-06T07:09:05Z-
dc.date.available2017-11-06T07:09:05Z-
dc.date.issued2017-11-02en
dc.identifier.citationPriante D, Janjua B, Prabaswara A, Subedi RC, Elafandy RT, et al. (2017) Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer. Optical Materials Express 7: 4214. Available: http://dx.doi.org/10.1364/ome.7.004214.en
dc.identifier.issn2159-3930en
dc.identifier.doi10.1364/ome.7.004214en
dc.identifier.urihttp://hdl.handle.net/10754/626118-
dc.description.abstractIn this paper, we describe ultraviolet-A (UV-A) light-emitting diodes (LEDs) emitting at 325 nm based on a highly uniform structure of quantum-confined AlGaN quantum-disk nanowires (NWs). By incorporating a 20 nm TaN interlayer between a Ti pre-orienting layer and the silicon substrate, we eliminated the potential barrier for carrier injection and phonon transport, and inhibited the formation of interfacial silicide that led to device failure. Compared to previous reports on metal substrate, we achieved a 16 × reduction in root-mean-square (RMS) roughness, from 24 nm to 1.6 nm, for the samples with the Ti/TaN metal-bilayer, owing to the effective diffusion barrier characteristic of TaN. This was confirmed using energy dispersive X-ray spectroscopy (EDXS) and electron energy loss spectroscopy (EELS). We achieved a considerable increase in the injection current density (up to 90 A/cm2) compared to our previous studies, and an optical power of 1.9 μW for the 0.5 × 0.5 mm2 NWs-LED. This work provides a feasible pathway for both a reliable and stable UV-A device operation at elevated current injection, and eventually towards low-cost production of UV devices, leveraging on the scalability of silicon substrates.en
dc.description.sponsorshipKing Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work was partially supported by the King Abdullah University of Science and Technology (KAUST) baseline funding, BAS/1/1614-01-01.en
dc.publisherThe Optical Societyen
dc.relation.urlhttps://www.osapublishing.org/ome/abstract.cfm?uri=ome-7-12-4214en
dc.rightsOSA's "Copyright Transfer and Open Access Publishing Agreement" (OAPA) is the default option for most authors when publishing in one of our fully open access journals or when opting for open access in our hybrid journals. All articles published under our OAPA are freely accessible, while copyright is transferred to OSA. Authors may post the published version of their article to their personal website, institutional repository, or a repository required by their funding agency. Authors and readers may use, reuse, and build upon the article, or use it for text or data mining, as long as the purpose is non-commercial and appropriate attribution is maintained.en
dc.titleHighly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayeren
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalOptical Materials Expressen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorPriante, Davideen
kaust.authorJanjua, Bilalen
kaust.authorPrabaswara, Adityaen
kaust.authorSubedi, Ram Chandraen
kaust.authorElafandy, Rami T.en
kaust.authorLopatin, Sergeien
kaust.authorAnjum, Dalaver H.en
kaust.authorZhao, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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