Flexible diodes for radio frequency (RF) electronics: a materials perspective

Handle URI:
http://hdl.handle.net/10754/626064
Title:
Flexible diodes for radio frequency (RF) electronics: a materials perspective
Authors:
Semple, James; Georgiadou, Dimitra G ( 0000-0002-2620-3346 ) ; Wyatt-Moon, Gwenhivir; Gelinck, Gerwin; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 )
Abstract:
Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Semple J, Georgiadou DG, Wyatt-Moon G, Gelinck G, Anthopoulos TD (2017) Flexible diodes for radio frequency (RF) electronics: a materials perspective. Semiconductor Science and Technology 32: 123002. Available: http://dx.doi.org/10.1088/1361-6641/aa89ce.
Publisher:
IOP Publishing
Journal:
Semiconductor Science and Technology
Issue Date:
30-Oct-2017
DOI:
10.1088/1361-6641/aa89ce
Type:
Article
ISSN:
0268-1242; 1361-6641
Sponsors:
The authors are grateful to the European Research Council (ERC) AMPRO grant number 280221, the European Union's Horizon 2020 research and innovation programme, under the Marie Skłodowska-Curie grant agreement 706707, and the Engineering and Physical Sciences Research Council (EPSRC) Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) grant no. EP/K03099X/1 for financial support.
Additional Links:
http://iopscience.iop.org/article/10.1088/1361-6641/aa89ce/meta
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSemple, Jamesen
dc.contributor.authorGeorgiadou, Dimitra Gen
dc.contributor.authorWyatt-Moon, Gwenhiviren
dc.contributor.authorGelinck, Gerwinen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2017-10-31T08:20:20Z-
dc.date.available2017-10-31T08:20:20Z-
dc.date.issued2017-10-30en
dc.identifier.citationSemple J, Georgiadou DG, Wyatt-Moon G, Gelinck G, Anthopoulos TD (2017) Flexible diodes for radio frequency (RF) electronics: a materials perspective. Semiconductor Science and Technology 32: 123002. Available: http://dx.doi.org/10.1088/1361-6641/aa89ce.en
dc.identifier.issn0268-1242en
dc.identifier.issn1361-6641en
dc.identifier.doi10.1088/1361-6641/aa89ceen
dc.identifier.urihttp://hdl.handle.net/10754/626064-
dc.description.abstractOver the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.en
dc.description.sponsorshipThe authors are grateful to the European Research Council (ERC) AMPRO grant number 280221, the European Union's Horizon 2020 research and innovation programme, under the Marie Skłodowska-Curie grant agreement 706707, and the Engineering and Physical Sciences Research Council (EPSRC) Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) grant no. EP/K03099X/1 for financial support.en
dc.publisherIOP Publishingen
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/1361-6641/aa89ce/metaen
dc.rightsOriginal content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.rights.urihttp://creativecommons.org/licenses/by/3.0en
dc.titleFlexible diodes for radio frequency (RF) electronics: a materials perspectiveen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalSemiconductor Science and Technologyen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, Exhibition Road, London SW7 2BW, United Kingdomen
dc.contributor.institutionDepartment of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB, Eindhoven, The Netherlandsen
dc.contributor.institutionHolst Centre/TNO, Hightech Campus 31, PO Box 8550, 5605 KN, Eindhoven, The Netherlandsen
kaust.authorAnthopoulos, Thomas D.en
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