First-principles prediction of Tl/SiC for valleytronics

Handle URI:
http://hdl.handle.net/10754/626016
Title:
First-principles prediction of Tl/SiC for valleytronics
Authors:
Xu, Zhen; Zhang, Qingyun; Shen, Qian ( 0000-0002-7197-2574 ) ; Cheng, Yingchun ( 0000-0002-8495-9184 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Huang, Wei
Abstract:
Recently, monolayer Tl on a Si or Ge substrate has been proposed for potential valleytronic systems. However, the band gaps of these systems are less than 0.1 eV, which is too small to be applied because an electric field or magnetic doping will reduce the band gaps further for the systems to become metallic. Here, we investigate SiC as an alternative substrate. By first-principles calculations we demonstrate that monolayer Tl can be grown on SiC. There are two valleys around the K/K′ points and the Berry curvature shows that the two valleys are inequivalent, indicating valley pseudospin. Moreover, due to the larger band gap of SiC (3.3 eV), the band gap of the Tl/SiC system is 0.6 eV, which is large enough for valley manipulation. Furthermore, we demonstrate that Cr doping can achieve valley polarization. Our study shows that the Tl/SiC system is promising for valleytronic applications.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Xu Z, Zhang Q, Shen Q, Cheng Y, Schwingenschlögl U, et al. (2017) First-principles prediction of Tl/SiC for valleytronics. J Mater Chem C 5: 10427–10433. Available: http://dx.doi.org/10.1039/c7tc03799f.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
J. Mater. Chem. C
Issue Date:
22-Sep-2017
DOI:
10.1039/c7tc03799f
Type:
Article
ISSN:
2050-7526; 2050-7534
Sponsors:
This work was financially supported by the National Natural Science Foundation of China (No. 11504169, 61575094 and 21673118), the National Basic Research Program of China (2015CB932200) and the Jiangsu Qing Lan Project, the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province, China (16KJB150018). The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2017/TC/C7TC03799F#!divAbstract
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorXu, Zhenen
dc.contributor.authorZhang, Qingyunen
dc.contributor.authorShen, Qianen
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorHuang, Weien
dc.date.accessioned2017-10-30T08:39:50Z-
dc.date.available2017-10-30T08:39:50Z-
dc.date.issued2017-09-22en
dc.identifier.citationXu Z, Zhang Q, Shen Q, Cheng Y, Schwingenschlögl U, et al. (2017) First-principles prediction of Tl/SiC for valleytronics. J Mater Chem C 5: 10427–10433. Available: http://dx.doi.org/10.1039/c7tc03799f.en
dc.identifier.issn2050-7526en
dc.identifier.issn2050-7534en
dc.identifier.doi10.1039/c7tc03799fen
dc.identifier.urihttp://hdl.handle.net/10754/626016-
dc.description.abstractRecently, monolayer Tl on a Si or Ge substrate has been proposed for potential valleytronic systems. However, the band gaps of these systems are less than 0.1 eV, which is too small to be applied because an electric field or magnetic doping will reduce the band gaps further for the systems to become metallic. Here, we investigate SiC as an alternative substrate. By first-principles calculations we demonstrate that monolayer Tl can be grown on SiC. There are two valleys around the K/K′ points and the Berry curvature shows that the two valleys are inequivalent, indicating valley pseudospin. Moreover, due to the larger band gap of SiC (3.3 eV), the band gap of the Tl/SiC system is 0.6 eV, which is large enough for valley manipulation. Furthermore, we demonstrate that Cr doping can achieve valley polarization. Our study shows that the Tl/SiC system is promising for valleytronic applications.en
dc.description.sponsorshipThis work was financially supported by the National Natural Science Foundation of China (No. 11504169, 61575094 and 21673118), the National Basic Research Program of China (2015CB932200) and the Jiangsu Qing Lan Project, the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province, China (16KJB150018). The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2017/TC/C7TC03799F#!divAbstracten
dc.titleFirst-principles prediction of Tl/SiC for valleytronicsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJ. Mater. Chem. Cen
dc.contributor.institutionKey Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, Chinaen
kaust.authorZhang, Qingyunen
kaust.authorSchwingenschlögl, Udoen
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