A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

Handle URI:
http://hdl.handle.net/10754/626012
Title:
A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity
Authors:
Flemban, Tahani H. ( 0000-0002-2661-5092 ) ; Haque, Mohammed; Ajia, Idris A. ( 0000-0003-3156-4426 ) ; Alwadai, Norah Mohammed Mosfer; Mitra, Somak; Wu, Tao ( 0000-0003-0845-4827 ) ; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Flemban TH, Haque MA, Ajia I, Alwadai N, Mitra S, et al. (2017) A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity. ACS Applied Materials & Interfaces 9: 37120–37127. Available: http://dx.doi.org/10.1021/acsami.7b09645.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
19-Sep-2017
DOI:
10.1021/acsami.7b09645
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
Tahani Flemban is grateful for a scholarship from Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia. The authors wish to thank Ms. Ecaterina Ware from Imperial College London, UK, for TEM sample preparation and Dr. M. A. Roldan from KAUST core lab for HR-TEM measurements. The authors thank KAUST for the financial support.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsami.7b09645
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorFlemban, Tahani H.en
dc.contributor.authorHaque, Mohammeden
dc.contributor.authorAjia, Idris A.en
dc.contributor.authorAlwadai, Norah Mohammed Mosferen
dc.contributor.authorMitra, Somaken
dc.contributor.authorWu, Taoen
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2017-10-30T08:39:50Z-
dc.date.available2017-10-30T08:39:50Z-
dc.date.issued2017-09-19en
dc.identifier.citationFlemban TH, Haque MA, Ajia I, Alwadai N, Mitra S, et al. (2017) A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity. ACS Applied Materials & Interfaces 9: 37120–37127. Available: http://dx.doi.org/10.1021/acsami.7b09645.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.7b09645en
dc.identifier.urihttp://hdl.handle.net/10754/626012-
dc.description.abstractEnhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.en
dc.description.sponsorshipTahani Flemban is grateful for a scholarship from Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia. The authors wish to thank Ms. Ecaterina Ware from Imperial College London, UK, for TEM sample preparation and Dr. M. A. Roldan from KAUST core lab for HR-TEM measurements. The authors thank KAUST for the financial support.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b09645en
dc.subjectheterojunctionsen
dc.subjectnanotubesen
dc.subjectoxidesen
dc.subjectphotodetectorsen
dc.subjectpulsed laser depositionsen
dc.subjecttime-resolved measurementsen
dc.subjectultravioleten
dc.titleA Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivityen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Applied Materials & Interfacesen
kaust.authorFlemban, Tahani H.en
kaust.authorHaque, Mohammeden
kaust.authorAjia, Idris A.en
kaust.authorAlwadai, Norah Mohammed Mosferen
kaust.authorMitra, Somaken
kaust.authorWu, Taoen
kaust.authorRoqan, Iman S.en
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